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PDF 5STP42U5800 Data sheet ( Hoja de datos )
| Número de pieza | 5STP42U5800 | |
| Descripción | Phase Control Thyristor | |
| Fabricantes | ABB | |
| Logotipo |  |
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VDRM
VDSM
IT(AV)M
IT(RMS)
ITSM
V(T0)
rT
= 5600
= 6500
= 3460
= 5440
= 71.4×103
= 1.24
= 0.162
V
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 42U6500
Doc. No. 5SYA1043-02 Oct. 04
• Patented free-floating silicon technology
www.DataShee•t4U.cLomow on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Symbol Conditions
5STP 42U6500 5STP 42U6200 5STP 42U5800
VDSM, VRSM f = 5 Hz, tp = 10 ms
6500 V
6200 V
5800 V
VDRM, VRRM f = 50 Hz, tp = 10 ms
5600 V
5300 V
4900 V
VRSM
tp = 5 ms, single pulse
7000 V
6700 V
6300 V
dV/dtcrit
Exp. to 3750 V, Tvj = 110°C
Characteristic values
Parameter
Symbol Conditions
2000 V/µs
min typ max
Unit
Forward leakage current
IDSM
VDSM, Tvj = 110°C
700 mA
Reverse leakage current
IRSM
VRSM, Tvj = 110°C
700 mA
Mechanical data
Maximum rated values 1)
Parameter
Symbol Conditions
min typ
Mounting force
FM
120 135
Acceleration
a Device unclamped
Acceleration
Characteristic values
Parameter
a Device clamped
Symbol Conditions
min typ
Weight
m
Housing thickness
H
FM = 135 kN, Ta = 25 °C
34.8
Surface creepage distance
DS
56
Air strike distance
Da
22
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
160
50
100
max
3.6
35.5
Unit
kN
m/s2
m/s2
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5STP 42U6500
www.DataSheet4U.com
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
IG (t)
100 %
90 %
IGM ≈ 2..5 A
IGM
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr ≤ 1 µs
tp(IGM) ≈ 5...20 µs
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
10 %
tr
diG/dt
tp (IGM)
tp (IGon)
IGon
t
Fig. 8 Recommended gate current waveform.
Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1043-02 Oct. 04
page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5STP42U5800.PDF ] | |
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