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PDF MRF6V14300HSR3 Data sheet ( Hoja de datos )
| Número de pieza | MRF6V14300HSR3 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Motorola Semiconductors | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout =
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec,
Duty Cycle = 12%
Power Gain — 18 dB
Drain Efficiency — 60.5%
• Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Power
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• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6V14300H
Rev. 2, 11/2008
MRF6V14300HR3
MRF6V14300HSR3
1400 MHz, 330 W, 50 V
PULSED
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6V14300HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6V14300HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +100
- 6.0, +10
- 65 to +150
150
200
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle
RθJC
0.13
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
1
1 page  
TYPICAL CHARACTERISTICS
1000
100
Coss
Ciss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
Crss
1
0.1
0
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10 20 30 40
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
50
Figure 3. Capacitance versus Drain - Source Voltage
160
140
120
100 Pout = 300 W
80
Pout = 270 W
60 Pout = 330 W
40
20
VDD = 50 Vdc, IDQ = 150 mA
f = 1200 MHz, Pulse Width = 300 μsec
0
0 2 4 6 8 10 12 14 16 18 20
DUTY CYCLE (%)
Figure 4. Safe Operating Area
24 65
22 55
Gps
20
ηD
45
18 35
VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
16
50 100
25
400
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
59
58 P3dB = 55.30 dBm (339 W)
Ideal
57 P1dB = 54.77 dBm (300 W)
56
55 Actual
54
53
52
51
50
49 VDD = 50 Vdc, IDQ = 150 mA, f = 1400 MHz
48 Pulse Width = 300 μsec, Duty Cycle = 12%
47
27 29 31 33 35 37 39
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
22
IDQ = 600 mA
21
20 300 mA
150 mA
19
450 mA
18
VDD = 50 Vdc, f = 1400 MHz
Pulse Width = 300 μsec, Duty Cycle = 12%
17
50 100
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
400
22
IDQ = 150 mA, f = 1400 MHz
21 Pulse Width = 300 μsec
Duty Cycle = 12%
20
19
18
17 45 V 50 V
40 V
16 35 V
VDD = 30 V
15
50 100
400
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
5
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