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부품번호 | 9NQ20T 기능 |
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기능 | PHF9NQ20T | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 9 페이지수
Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX9NQ20T , PHF9NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
d
g
VDSS = 200 V
ID = 5.2 A
RDS(ON) ≤ 400 mΩ
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s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN DESCRIPTION
1 gate
case
case
2 drain
3 source
case isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
5.2
3.3
21
25
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100
Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX9NQ20T , PHF9NQ20T
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
www.DataSheet4U.com30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); VGS ≥ 10 V
Peak Pulsed Drain Current, IDM (A)
100
RDS(on) = VDS/ ID
10
tp = 10 us
100us
1 1 ms
D.C.
10 ms
100 ms
0.1
1
10 100
Drain-Source Voltage, VDS (V)
1000
Fig.3. Safe operating area
ID & IDM = f(VDS); IDM single pulse; parameter tp
Transient thermal impedance, Zth j-a (K/W)
10
D = 0.5
0.2
1
0.1
0.05
0.02
0.1
single pulse
0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
Pulse width, tp (s)
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
10 Drain Current, ID (A)
Tj = 25 C
9
8
7
VGS = 10V
8V
6V
5.5 V
6
5
4 5V
3
2 4.5 V
1
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-Source Voltage, VDS (V)
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS)
Drain-Source On Resistance, RDS(on) (Ohms)
0.5
0.45
4.5 V
5V
Tj = 25 C
0.4
0.35
0.3 5.5 V
0.25
6V
0.2
0.15
VGS = 10V
0.1 8 V
0.05
0
0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID (A)
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID)
November 2000
4
Rev 1.100
4페이지 Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX9NQ20T , PHF9NQ20T
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220
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D1
D
E
P
q
T
L2
b1
L b2
123
b
e
e1
L1
wM
A
A1
j
K
Q
c
SOT186A
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 b2 c D D1 E e e1 j
mm
4.6 2.9
4.0 2.5
0.9
0.7
1.1
0.9
1.4
1.2
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
2.3
K
L
L1
L2(1)
max.
P
0.6 14.4 3.30
0.4 13.5 2.79
3
3.2
3.0
Q
2.6
2.3
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
SOT186A
TO-220
q T(2) w
3.0
2.6
2.5
0.4
ISSUE DATE
97-06-11
Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
November 2000
7
Rev 1.100
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
9NQ20T | PHF9NQ20T | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |