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PDF 3310GH Data sheet ( Hoja de datos )
| Número de pieza | 3310GH | |
| Descripción | AP3310GH | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 3310GH (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Advanced Power
Electronics Corp.
AP3310GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ 2.5V Gate Drive Capability
www.DataSheet4▼U.cFomast Switching Characteristic
Description
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
This device is suited for low voltage and battery power applications.
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
GD
S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
G
D
S
TO-251(J)
Rating
- 20
+12
-10
-6.2
-24
25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Value
5.0
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200808155
1 page  
5
I D =-2.8A
V DS =-6V
4
www.DataSheet4U.com
3
2
1
0
0246
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
8
10
T j =150 o C
T j =25 o C
1
AP3310GH/J
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1 3 5 7 9 11 13
-V DS (V)
Fig 10. Typical Capacitance Characteristics
1.5
1
0.5
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 3310GH.PDF ] | |
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