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PDF AOU405 Data sheet ( Hoja de datos )

Número de pieza AOU405
Descripción P-Channel Enhancement Mode Field Effect Transistor
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOU405
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU405 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the TO-251 package, this device is well suited for
high current load applications. Standard Product
AOU405 is Pb-free (meets ROHS & Sony 259
specifications). AOU405L is a Green Product
ordering option. AOU405 and AOU405L are
electrically identical.
Features
VDS (V) = -30V
ID = -18A (VGS = -10V)
RDS(ON) < 34m(VGS = -10V)
RDS(ON) < 60m(VGS = -4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G DS
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B,G
TA=25°C G
TA=100°C G
VGS
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-18
-18
-40
-18
40
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
1.8
Max
25
50
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W

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AOU405 pdf
AOU405
TwYwPwI.CDAaLtaSEhLeEeCt4TUR.cIComAL AND THERMAL CHARACTERISTICS
20 80
16
12
tA
=
LID
BV VDD
8
4 TA=25°C
60
40
20
0
0.00001
0.0001
0.001
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
20
18
16
14
12
10
8
6
4
2
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
Alpha & Omega Semiconductor, Ltd.

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