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Número de pieza | AOT3N60 | |
Descripción | 600V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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No Preview Available ! www.datasheet4u.AcoOm T3N60
2.5A, 600V N-Channel MOSFET
formerly engineering part number AOT9602
General Description
The AOT3N60 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Features
VDS (V) = 700V @ 150°C
ID = 2.5A
RDS(ON) < 3.5 Ω (VGS = 10V)
100% UIS Tested!
100% R g Tested!
C iss, C oss , C rss Tested!
Top View
TO-220
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
2.5
1.6
8
2
60
120
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
59.5
0.48
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-50 to 150
300
Thermal Characteristics
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient A
RθJA
54
65
Maximum Case-to-Sink A
RθCS
-
0.5
Maximum Junction-to-Case D,F
RθJC
1.2
2.1
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page AOT3N60
www.datasheet4u.com +
VDC
-
Vgs
Ig
Vds
Vgs
Rg
Vgs
Vds
Id
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Res istive Switching Test Circuit & Waveforms
RL
Charge
DUT
+
VDC Vdd
-
Vds
Vgs
t d(on) t r
t d(off)
tf
t on t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
2
AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
90%
10%
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Test Circuit & Waveforms
DUT
Qrr = - Idt
Vgs
L
Isd
IF dI/dt
trr
+
VDC Vdd
IRM
- Vds
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AOT3N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
AOT3N60 | 600V N-Channel MOSFET | Alpha & Omega Semiconductors |
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