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PDF AOT9600 Data sheet ( Hoja de datos )
| Número de pieza | AOT9600 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AOT9600 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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www.datasheet4uA.coOmT1N60
1.3A, 600V N-Channel MOSFET
formerly engineering part number AOT9600
General Description
The AOT1N60 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
Top View
TO-220
Features
VDS (V) = 700V @ 150°C
ID = 1.3A
RDS(ON) < 9Ω (VGS = 10V)
100% UIS Tested!
100% R g Tested!
C iss , C oss , C rss Tested!
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
1.3
0.8
4
1.0
15
30
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
41.7
0.33
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
-50 to 150
300
Thermal Characteristics
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient A
Maximum Case-to-Sink A
Maximum Junction-to-Case D,F
RθJA
RθCS
RθJC
55
-
2
65
0.5
3
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOT1N60
www.datasheet4u.com +
VDC
-
Vgs
Ig
Vds
Vgs
Rg
Vgs
Vds
Id
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Res istive Switching Test Circuit & Waveforms
RL
Charge
DUT
+
VDC Vdd
-
Vds
Vgs
t d(on) t r
t d(off)
tf
t on t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
2
AR
Vds
+Vgs
VDC Vdd
- Id
DUT
Vgs
90%
10%
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Test Circuit & Waveforms
DUT
Qrr = - Idt
Vgs
L
Isd
IF dI/dt
trr
+
VDC Vdd
IRM
- Vds
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOT9600.PDF ] | |
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