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PDF MRF5S19060NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF5S19060NBR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
www.DataSheet4U.com
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large - signal, common -
source amplifier applications in 28 Volt base station equipment.
• TPTyroapuftifci=cal1C22o-dWceaasrtrt8iserTANhvrg-o.Cu, DgFhuMl1lAF3P)reCeqrhufoaernnmncaeynlBcBaean:ndVd.DwIDSid=-th925=8(1PV.oi2lol2tts8,,8SIDyMQnHc=,z.P7P5aA0giRnmg=A, ,
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF5S19060N
Rev. 6, 5/2006
MRF5S19060NR1
MRF5S19060NBR1
1930 - 1990 MHz, 12 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S19060NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S19060NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +65
- 0.5, +15
218.8
1.25
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 75°C, 12 W CW
RθJC
0.80
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19060NR1 MRF5S19060NBR1
1
1 page  
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VGG
R1
R2 C1 C2
R3
C3
C4 C5
VDD
C6
C7 C8 C9
C10 C11
C12
C14 C15
C13
MRF5S19060M
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19060NR1/NBR1 Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF5S19060NR1 MRF5S19060NBR1
5
5 Page 
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NOTES
RF Device Data
Freescale Semiconductor
MRF5S19060NR1 MRF5S19060NBR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MRF5S19060NBR1.PDF ] | |
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