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PDF WV3HG128M72AER-D6 Data sheet ( Hoja de datos )

Número de pieza WV3HG128M72AER-D6
Descripción 1GB - 128Mx72 DDR2 SDRAM REGISTERED
Fabricantes White Electronic Designs 
Logotipo White Electronic Designs Logotipo



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White Electronic Designs WV3HG128M72AER-D6
ADVANCED*
1GB – 128Mx72 DDR2 SDRAM REGISTERED, w/PLL
FEATURES
240-pin, dual in-line memory module
Fast data transfer rates: PC2-6400*, PC2-5300*,
PC2-4300 and PC2-3200
Utilizes 800, 667, 533 and 400 MT/s DDR2 SDRAM
components
VCC = VCCQ = 1.8V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
DLL to align DQ and DQS transitions with CK
Multiple internal device banks for concurrent
operation
Supports duplicate output strobe (RDQS/RDQS#)
Programmable CAS# latency (CL): 3, 4, 5 and 6
Adjustable data-output drive strength
On-die termination (ODT)
Posted CAS# latency: 0, 1, 2, 3 and 4
Serial Presence Detect (SPD) with EEPROM
64ms: 8,192 cycle refresh
Gold edge contacts
wwwP.DraotdauSchteiest4leUa.cdo-mfree
RoHS compliant
Package option
• 240 Pin DIMM
• PCB – 29.97mm (1.18") Max
DESCRIPTION
The WV3HG128M72AER is a 128Mx72 Double Data Rate
DDR2 SDRAM high density module. This memory module
consists of eighteen 128Mx4 bit with 4 banks DDR2
Synchronous DRAMs in FBGA packages, mounted on a
240-pin DIMM FR4 substrate.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
• Vendor source control options
• Industrial temperature option
Clock Speed
CL-tRCD-tRP
* Consult factory for availability
PC2-3200
200MHz
3-3-3
OPERATING FREQUENCIES
PC2-4300
266MHz
4-4-4
PC2-5300*
333MHz
5-5-5
PC2-6400*
400MHz
6-6-6
March 2005
Rev. 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

1 page




WV3HG128M72AER-D6 pdf
White Electronic Designs WV3HG128M72AER-D6
ADVANCED
DDR2 IDD SPECIFICATIONS AND CONDITIONS
Includes DDR2 SDRAM components only
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P
Proposed Conditions
Operating one bank active-precharge current;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD);
CKE is HIGH, CS\ is HIGH between valid commands; Address businputs are SWITCHING; Data pattern is
same as IDD6W
Precharge power-down current;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus
inputs are FLOATING
Precharge quiet standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputsare STABLE;
Data bus inputs are FLOATING
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
Active power-down current;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0mA
Slow PDN Exit MRS(12) = 1mA
IDD3N Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
IDD6W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data
bus inputs are SWITCHING
wwIDwD.6DR ataSOhpeereatt4inUg .bcuorsmt read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as IDD6W
IDD5B Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
IDD6 Self refresh current;
CK and CK\ at 0V; CKE 0.2V; Other control and address bus inputs
are FLOATING; Data bus inputs are FLOATING
IDD7 Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC =
tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address
bus inputs are STABLE during DESELECTs; Data pattern is same as IDD6R; Refer to the following page for
detailed timing conditions
534
2,420
2,640
730
1,110
1,090
1,190
600
1,840
3,550
3,230
3,610
740
5,540
403
2,250
2,400
670
1,110
1,060
1,130
570
1,730
2,810
2,730
3,430
680
5,210
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
March 2005
Rev. 0
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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