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WV3EG265M72EFSU-D4 데이터시트 PDF




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기능 1GB - 2x64Mx72 DDR SDRAM UNBUFFERED
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WV3EG265M72EFSU-D4 데이터시트, 핀배열, 회로
White Electronic Designs WV3EG265M72EFSU-D4
ADVANCED*
1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA
FEATURES
Unbuffered 200-pin (SO-DIMM), small-outline, dual-
in-line module
Fast data transfer rate: PC-2100, and PC-2700
Clock speeds of 133MHz, and 166MHz
Supports ECC error detection and correction
VCC = VCCQ = +2.5V ± 0.2V(133 and 166MHz)
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency: DDR 266 (2, 2.5
clock), DDR333 (2.5 clock)
Programmable Burst Length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh, 7.8µs refresh interval
(8K/64ms refresh)
Serial presence detect (SPD) with EEPROM
Dual Rank
Leaded & lead-free/RoHS compliant
Gold edge contacts
JEDEC standard 200 pin, small-outline, SO-DIMM
wwwp.DaactkaaSgheeet4U.com
• PCB height option:
31.75 mm (1.25”)
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
DESCRIPTION
The WV3EG265M72EFSU is a 2x64Mx72 Double Data
Rate SDRAM memory module based on 512Mb DDR
SDRAM components. The module consists of eighteen
64Mx8 DDR SDRAMs in FBGA packages mounted on a
200 pin FR4 substrate.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
Clock Speed
CL-tRCD-tRP
OPERATING FREQUENCIES
DDR333@CL=2.5
166MHz
2.5-3-3
DDR266@CL=2
133MHz
2-2-2
DDR266@CL=2.5
133MHz
2.5-3-3
May 2006
Rev. 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com




WV3EG265M72EFSU-D4 pdf, 반도체, 판매, 대치품
White Electronic Designs WV3EG265M72EFSU-D4
ADVANCED
DC ELECTRICAL CHARACTERISTICS
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
Notes
Supply Voltage DRR266/DDR333 (nominal VCC 2.5V)
VCC 2.3 2.7
V
I/O Supply Voltage DRR266/DDR333 (nominal VCC 2.5V
VCCQ
2.3
2.7
V
I/O Reference Voltage
I/O Termination Voltage
VREF
0.49 × VCC
0.51 × VCC
VTT
VREF - 0.04
VREF + 0.04
V
V
1
2
Input Logic High Voltage
VIH(DC)
VREF + 0.15
VCC + 0.30
V
Input Logic Low Voltage
Input voltage level, CK and CK#
Input differential voltage, CK and CK#
VIL(DC)
VIN(DC)
VID(DC)
-0.3 VREF - 0.15
-0.3 VREF + 0.30
0.3 VREF + 0.60
V
V
V
3
Input crossing point voltage, CK and CK#
VIX(DC)
0.3 VREF - 0.60
V
Addr CAS#,
RAS#, WE#
-36 36 µA
Input leakage current
CS#, CKE
CK, CK#
II -18 18 µA
-10 10 µA
DM -4 4 µA
Output leakage current
IOZ -10 10 µA
Output high current (normal strength) VOUT = v +0.84V
Output high current (normal strength) VOUT = VTT - 0.84V
IOH -16.8
IOL 16.8
mA
mA
Output high current (half strength) VOUT = VTT - 0.45V
IOH -9
mA
Output high current (half strength) VOUT = VTT - 0.45V
IOL 9
mA
Notes:
1 VREF is expected to equal to 0.5*VCCQ of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed +/-2 percent of the
DC value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
3. VID is the magnitude of the difference between the input level on CK and the input level of CK#.
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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VIN, VOUT
Voltage on VCC pin relative to VSS
VCC, VCCQ
Voltage on VCC & VCCQ supply relative to VSS
VREF Voltage of VREF supply relative to VSS
TSTG Storage Temperature
TA Operating temperature
PD Power dissipation
IOS Short circuit output current
Notes:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceed.
Functional ioeration should be restricted to recommended operation conditions.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
0 ~ 70
18
50
Units
V
V
V
°C
°C
W
mA
May 2006
Rev. 0
4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

4페이지










WV3EG265M72EFSU-D4 전자부품, 판매, 대치품
White Electronic Designs WV3EG265M72EFSU-D4
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC
OPERATING CONDITIONS
VCC = VCCQ = +2.5V ±0.2V
AC CHARACTERISTICS
PARAMETER
Row cycle time
Refresh row cycle time
Row active
RAS# to CAS# delay
Row precharge time
Row active to row active delay
Write recovery time
Last data in to READ command
Clock cycle time
Clock high level width
Clock low level width
DQS-out access time from CK/CK#
Output data access time from CK/CK#
Data stobe edge to output data edge
Read preamble
Read postamble
CK to vaild DQS-in
DQS-in setup time
DQS-in hold time
DQS falling edge to CK rising-setup time
DQS falling edge to CK rising-hold time
DQS-in high level width
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Address and control input setup time (fast)
Address and control input hold time (fast)
Address and control input setup time (slow)
Address and control input hold time (slow)
Data-out high impedance time from CK/CK#
Data-out low impedance time to CK/CK#
Mode register set cycle
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & address input pulse width
DQ & DM input pulse width
Exit self refresh to non-read command
CL = 2.5
CL =2
SYMBOL
tRC
tRFC
tRAS
tRCD
tRP
tRRD
tWR
tWTR
tCK (2.5)
tCK (2)
tCH
tCL
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPRE
tDSS
tDHS
tDQHS
TDQSL
tISF
tIHF
tISS
tIHS
tHZ
tLZ
tMRD
tDS
tDH
tIPW
tDIPW
tXSNR
335
MIN MAX
60
72
42 70K
18
18
12
15
1
6 12
7.5 12
0.45 0.55
0.45 0.55
-0.6 +0.6
-0.7 +0.7
0.45
0.9 1.1
0.4 0.6
0.75 1.25
0
0.25
0.2
0.2
0.35
0.35
0.75
0.75
0.8
0.8
-0.70 +0.70
-0.70 +0.70
12
0.45
0.45
2.2
1.75
75
262
MIN MAX
65
75
45 120K
20
20
15
15
1
7.5 12
7.5 12
0.45 0.55
0.45 0.55
-0.75 +0.75
-0.75 +0.75
0.5
0.9 1.1
0.4 0.6
0.75 1.25
0
0.25
0.2
0.2
0.35
0.35
0.9
0.9
1.0
1.0
-0.75 +0.75
-0.75 +0.75
15
0.5
0.5
2.2
1.75
75
265
MIN MAX
65
75
45 120K
20
20
15
15
1
7.5 12
10 12
0.45 0.55
0.45 0.55
-0.75 +0.75
-0.75 +0.75
0.5
0.9 1.1
0.4 0.6
0.75 1.25
0
0.25
0.2
0.2
0.35
0.35
0.9
0.9
1.0
1.0
-0.75 +0.75
-0.75 +0.75
15
0.5
0.5
2.2
1.75
75
UNITS
tCK
ps
ps
tCK
ns
ns
ns
ns
ns
ns
tCK
tCK
ns
ns
ns
tCK
tCK
tCK
ns
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* AC specification is based on SAMSUNG components. Other DRAM manufactures specification may be different.
Continued on next page
May 2006
Rev. 0
7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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부품번호상세설명 및 기능제조사
WV3EG265M72EFSU-D4

1GB - 2x64Mx72 DDR SDRAM

 UNBUFFERED
UNBUFFERED
WV3EG265M72EFSU-D4

1GB - 2x64Mx72 DDR SDRAM UNBUFFERED

White Electronic Designs
White Electronic Designs

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