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Número de pieza | IXZ2210N50L | |
Descripción | (IXZ210N50L / IXZ2210N50L) N-Channel Enhancement Mode Linear 175MHz RF MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXZ2210N50L (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! IXZ210N50L & IXZ2210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ210N50L single ended device unless otherwise noted.
Symbol Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by
TJM
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤
VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
500
500
±20
±30
10
60
16
TBD
5
>200
V
V
V
V
A
A
A
mJ
V/ns
V/ns
VDSS
ID25
= 500 V
= 10 A
150V (operating)
300 & 550 Watts
175MHz
IXZ210N50L IXZ2210N50L
PDC
PDHS
PDAMB
Tc = 25°C, Derate 6.0W/°C above
25°C
Tc = 25°C
RthJC
www.DRattahSJHhSeet4U.com
470
235
10
0.32
0.57
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
min.
500
3.5
RDS(on)
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
940 W
470 W
10
0.16
0.29
W
C/W
C/W
typ. max.
4.95
1.0
6.5
±100
50
1
V
V
nA
µA
mA
Ω
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS RF Low Capacitance Z-MOSTM
Process
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
gfs
TJ
TJM
Tstg
TL
Weight
VDS = 50 V, ID = 0.5ID25, pulse test
1.6mm(0.063 in) from case for 10 s
3.8 S
-55 +175 °C
+175 °C
-55 + 175 °C
300 °C
4g
Advantages
• High Performance RF Package
• Easy to mount—no insulators needed
(1) Thermal specifications are for the pack-
age, not per transistor
1 page IXZ210N50L & IXZ2210N50L
RF Power MOSFET
S-PARMATERS for Ids = 500mA and Vds = 85V
F MHz
2.00
2.56
3.12
3.68
4.24
4.80
5.36
5.92
6.48
7.04
7.60
8.16
8.72
9.28
9.84
10.40
10.96
11.52
12.08
12.64
13.20
13.76
14.32
14.88
15.44
16.00
16.56
17.12
17.68
www.DataSheet41U8.c.o2m4
18.80
19.36
19.92
20.48
21.04
21.60
22.16
22.72
23.28
23.84
24.40
24.96
25.52
26.08
26.64
27.20
27.76
28.32
28.88
29.44
30.00
mag S11 ang S11 mag S12 ang S12 mag S21 ang S21 mag S22 ang S22
1.00
0.92
0.89
0.87
0.87
0.87
0.87
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.91
0.91
0.91
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.94
0.95
0.94
0.95
0.95
0.95
0.95
0.95
0.95
0.95
-75.60
-88.14
-97.38
-105.23
-111.43
-116.93
-121.73
-125.77
-129.43
-132.51
-135.38
-137.91
-140.21
-142.15
-144.08
-145.79
-147.24
-148.71
-150.00
-151.28
-152.29
-153.33
-154.29
-155.22
-156.05
-156.02
-156.80
-157.45
-158.24
-159.00
-159.52
-160.13
-160.64
-161.22
-161.70
-162.01
-162.64
-163.02
-163.36
-163.92
-164.13
-164.61
-164.83
-165.25
-165.49
-165.87
-166.18
-166.42
-166.71
-166.89
-167.21
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
51.67
41.71
26.40
20.78
17.69
13.57
11.35
14.74
18.53
5.00
11.59
4.28
2.67
-0.50
7.28
3.08
4.92
4.59
0.05
-3.47
3.75
6.98
-1.36
7.91
6.46
4.31
3.45
3.31
7.43
-0.33
8.91
-5.90
6.68
6.33
13.23
10.44
4.32
6.04
8.23
4.67
3.79
7.04
4.29
1.02
1.65
4.26
4.00
11.55
9.83
5.47
2.61
98.32 135.58
76.78 120.80
61.88 111.89
51.39 105.98
43.57 101.80
37.75 98.72
33.33 96.32
29.65 94.63
26.68 92.99
24.33 91.67
22.32 90.53
20.59 89.62
19.14 88.81
17.89 87.97
16.77 87.74
15.74 86.98
14.91 86.27
14.13 85.96
13.37 85.37
12.74 84.86
12.20 84.42
11.65 84.06
11.15 83.58
10.75 83.43
10.32 83.03
10.32 83.01
9.95 82.75
9.60 82.30
9.26 81.97
8.98 81.69
8.71 81.27
8.41 80.91
8.18 80.48
7.96 80.17
7.74 79.82
7.51 79.49
7.33 79.06
7.14 78.83
6.97 78.51
6.80 77.96
6.62 77.61
6.48 77.41
6.34 76.89
6.20 76.63
6.06 76.12
5.95 75.63
5.82 75.23
5.68 74.90
5.58 74.44
5.47 74.11
5.35 73.63
0.83 -77.19
0.73 -90.21
0.65 -99.74
0.61 -107.26
0.57 -113.20
0.55 -118.05
0.53 -121.94
0.52 -125.82
0.51 -128.85
0.51 -131.50
0.50 -133.72
0.50 -135.79
0.50 -137.30
0.49 -138.59
0.49 -139.86
0.49 -140.96
0.49 -142.13
0.49 -143.40
0.49 -143.90
0.49 -144.57
0.49 -145.23
0.49 -145.74
0.49 -146.57
0.49 -146.58
0.50 -147.08
0.50 -147.08
0.50 -147.29
0.50 -147.77
0.50 -148.05
0.50 -148.23
0.51 -148.60
0.51 -148.70
0.51 -148.83
0.51 -149.05
0.51 -149.25
0.52 -149.55
0.52 -149.56
0.52 -149.69
0.52 -149.75
0.53 -149.91
0.53 -149.91
0.53 -150.19
0.53 -150.00
0.53 -150.21
0.54 -150.41
0.54 -150.40
0.54 -150.46
0.55 -150.43
0.55 -150.48
0.55 -150.57
0.55 -150.69
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IXZ2210N50L.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXZ2210N50L | (IXZ210N50L / IXZ2210N50L) N-Channel Enhancement Mode Linear 175MHz RF MOSFET | IXYS Corporation |
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