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PDF 5SMX12L2510 Data sheet ( Hoja de datos )
| Número de pieza | 5SMX12L2510 | |
| Descripción | IGBT-Die | |
| Fabricantes | ABB | |
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VCE =
IC =
2500 V
50 A
IGBT-Die
5SMX 12L2510
Die size: 12.4 x 12.4 mm
• Low loss, rugged SPT technology
• Smooth switching for good EMC
• Large bondable emitter area
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V
DC collector current
IC
Peak collector current
ICM Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 2000 V, VCEM ≤ 2500 V
VGE ≤ 15 V, Tvj ≤ 125 °C
www.DJautnacSthioenet4teUm.cpomerature
Tvj
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA 1622-03 Sep 05
min max Unit
2500 V
50 A
100 A
-20 20 V
10 µs
-40 125 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5SMX 12L2510
20 10
VCC = 1250 V
15
VCC = 1800 V
Cies
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
10 1
Coes
5
IC = 50 A
Tvj = 25 °C
0
0.0 0.1 0.2 0.3 0.4 0.5
Qg [µC]
Fig. 5 Typical gate charge characteristics
Cres
0.1
0
5 10 15 20 25 30 35
VCE [V]
Fig. 6 Typical capacitances vs
collector-emitter voltage
www.DataSheet4U.com
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email
Internet www.abb.com/semiconductors
Doc. No. 5SYA 1622-03 Sep 05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 5SMX12L2510.PDF ] | |
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