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PDF 5SMX12M1273 Data sheet ( Hoja de datos )
| Número de pieza | 5SMX12M1273 | |
| Descripción | IGBT-Die | |
| Fabricantes | ABB | |
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VCE =
IC =
1200 V
150 A
IGBT-Die
5SMX 12M1273
Die size: 13.6 x 13.6 mm
• Low loss thin IGBT die
• Highly rugged SPT design
• Large bondable emitter area
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC
Peak collector current
ICM Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
www.DJautnacSthioenet4teUm.cpomerature
tpsc
VCC = 900 V, VCEM ≤ 1200 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Tvj
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA1637-00 July 06
min max Unit
1200 V
150 A
300 A
-20 20 V
10 µs
-40 150 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5SMX 12M1273
20 100
VCC = 600 V
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
15 Cies
VCC = 800 V
10
10
5
IC = 150 A
Tvj = 25 °C
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Qg [µC]
Fig. 5 Typical gate charge characteristics
Coes
1
Cres
0.1
0
5 10 15 20 25 30 35
VCE [V]
Fig. 6 Typical capacitances vs
collector-emitter voltage
www.DataSheet4U.com
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email
Internet www.abb.com/semiconductors
Doc. No. 5SYA1637-00 July 06
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 5SMX12M1273.PDF ] | |
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