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9N50C 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 9N50C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 9N50C 자료 제공

부품번호 9N50C 기능
기능 FQI9N50C
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


9N50C 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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9N50C 데이터시트, 핀배열, 회로
FQB9N50C/FQI9N50C
500V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 9 A, 500V, RDS(on) = 0.8 @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
www.DataSheet4U.com
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB9N50C/FQI9N50C
500
9
5.4
36
± 30
360
9
13.5
4.5
135
1.07
-55 to +150
300
Typ Max
-- 0.93
-- 40
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003




9N50C pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. I = 250 μ A
D
-50 0
50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
www.DataSheet4U.com Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 4.5 A
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 8. On-Resistance Variation
vs Temperature
10
8
6
4
2
0
25 50 75 100 125 150
T , Case Temperature []
C
Figure 10. Maximum Drain Current
vs Case Temperature
100
D =0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
s in g le p u lse
N o te s :
1 . Z θ J C( t ) = 0 . 9 3 / W M a x .
2 . D u ty F ac to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
101
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003

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9N50C 전자부품, 판매, 대치품
Package Dimensions
9.90 ±0.20
D2PAK
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54 TYP
0.80 ±0.10
2.54 TYP
www.DataSheet4U.com
10.00 ±0.20
0.10 ±0.15
2.40 ±0.20
0°~3°
0.50
+0.10
–0.05
10.00 ±0.20
(8.00)
(4.40)
(2XR0.45)
©2003 Fairchild Semiconductor Corporation
0.80 ±0.10
Dimensions in Millimeters
Rev. A, August 2003

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