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부품번호 | 32NAB125T12 기능 |
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기능 | SKIIP32NAB125T12 | ||
제조업체 | Semikron International | ||
로고 | |||
SKiiP 32 NAB 12
Absolute Maximum Ratings
Symbol Conditions 1)
Inverter
VCES
VGES
IC
ICM
IF = –IC
IFM = –ICM
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Bridge Rectifier
VRRM
ID
IFSM
I2t
Theatsink = 80 °C
tp = 10 ms; sin. 180 °, Tj = 25 °C
tp = 10 ms; sin. 180 °, Tj = 25 °C
Tj
Tstg
Visol
AC, 1 min.
Values
1200
± 20
65 / 45
130 / 90
60 / 40
120 / 80
1500
35
700
2400
– 40 . . . + 150
– 40 . . . + 125
2500
Units
V
V
A
A
A
A
V
A
A
A2s
°C
°C
V
Characteristics
Symbol Conditions 1)
min. typ. max. Units
IGBT - Inverter
VCEsat
td(on)
tr
td(off)
tf
Eon + Eoff
Cies
Rthjh
IC = 50 A Tj = 25 (125) °C
VCC = 600 V; VGE = ± 15 V
IC = 50 A; Tj = 125 °C
Rgon = Rgoff = 22 Ω
inductive load
VCE = 25 V; VGE = 0 V, 1 MHz
per IGBT
– 2,5(3,1) 3,0(3,7) V
– 44 100 ns
– 56 100 ns
– 380 500 ns
– 70 100 ns
– 13 – mJ
– 3,3 – nF
– – 0,5 K/W
IGBT - Chopper
VCEsat
IC = 25 A Tj = 25 (125) °C
td(on)
VCC = 600 V; VGE = ± 15 V
tr IC = 25 A; Tj = 125 °C
www.Dtda(toaffS) heet4U.com Rgon = Rgoff = 47 Ω
tf inductive load
Eon + Eoff
Cies VCE = 25 V; VGE = 0 V, 1 MHz
Rthjh
per IGBT
– 2,5(3,1) 3,0(3,7) V
– 75 150 ns
– 65 130 ns
– 400 600 ns
– 50 100 ns
– 6,2 – mJ
– 1,65 – nF
– – 1,0 K/W
Diode 2) - Inverter & Chopper
VF = VEC
VTO
rT
IRRM
Qrr
Eoff
Rthjh
IF = 50 A Tj = 25 (125) °C
Tj = 125 °C
Tj = 125 °C
IF = 50 A, VR = – 600 V
diF/dt = – 800 A/µs
VGE = 0 V, Tj = 125 °C
per diode
– 2,0(1,8) 2,5(2,3) V
– 1,0 1,2 V
– 16 22 mΩ
– 40 – A
– 8,0 – µC
– 2,0 – mJ
– – 1,0 K/W
Diode - Rectifier
VF
Rthjh
IF = 35 A, Tj = 25 °C
per diode
– 1,2 – V
– – 1,6 K/W
Temperature Sensor
RTS T = 25 / 100 °C
1000 / 1670
Ω
Mechanical Data
M1
Case
case to heatsink, SI Units
mechanical outline see page
B 16 – 9
2 – 2,5 Nm
M3
* For diagrams of the Chopper IGBT please refer to SKiiP 30 NAB 12
© by SEMIKRON
www.DataSheet4U.com
0698
MiniSKIIP 3
SEMIKRON integrated
intelligent Power
SKiiP 32 NAB 12
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
Case M3
UL recognized file no. E63532
• specification of temperature
sensor see part A
• common characteristics B 16 – 4
Options
• also available with powerful
chopper. For characteristics
please refer to Inverter IGBT
1) Theatsink = 25 °C, unless
otherwise specified
2) CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
www.DataSheet4U.com
B 16 – 59
www.DataSheet4U.com
MiniSKiiP 3
SKiiP 30 NAB 06
SKiiP 31 NAB 06
SKiiP 32 NAB 06
SKiiP 30 NAB 12
SKiiP 31 NAB 12
SKiiP 32 NAB 12
Circuit
Case M3
Layout and connections for the
customer’s printed circuit board
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구 성 | 총 4 페이지수 | ||
다운로드 | [ 32NAB125T12.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
32NAB125T12 | SKIIP32NAB125T12 | Semikron International |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |