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PDF TPC8017-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8017-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8017-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPC8017-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 25 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| =38 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
www.DataSheet4US.icnogmle pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
15
60
1.9
1.0
146
15
0.19
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next
page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
1 2003-7-25
1 page  
RDS (ON) – Ta
20
COMMON SOURCE
PULSE TEST
16
12 3.8A,7.5A
ID = 15A
8 VGS = 4.5 V
4
VGS = 10 V
ID = 3.8A,7.5A,15A
0
−80 −40
0
40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
TPC8017-H
1000
100
10
IDR – VDS
COMMON SOURCE
Ta = 25°C
PULSE TEST
10
3
4.5
1
1
VGS = 0 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
DRAIN-SOURCE VOLTAGE VDS (V)
10000
1000
CAPACITANCE – VDS
Ciss
Coss
100
CソOーMスM接ON地SOURCE
VGGSS==00VV
f = 1 MHz
Tca = 25°C
10
0.1
1
Crss
10 100
www.DataSheet4U.com
DRAIN-SOURCE VOLTAGE VDS (V)
Vth – Ta
2.5
2
1.5
1
COMMON SOURCE
0.5 VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80 −40
0
40
80 120 160
AMBIENT TEMPERATURE Ta (°C)
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a
glass-epoxy board(a) (Note 2a)
(2)Device mounted on a
glass-epoxy board(b) (Note 2b)
ｔ＝10s
0.4
0
0 40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
5
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
50
COMMON SOURCE
ID = 15 A
40 Ta = 25°C
PULSE TEST
VDD = 6 V
30
VDS
12
20 24
VGS
10
20
16
12
8
4
00
0 8 16 24 32 40
TOTAL GATE CHARGE Qg (nC)
2003-7-25
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8017-H.PDF ] | |
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