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PDF PSMN027-100PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN027-100PS | |
| Descripción | N-channel 100V Standard Level MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN027-100PS
N-channel 100V 26.8 mΩ standard level MOSFET in TO220.
Rev. 01 — 22 January 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
www.DataSheet4U.com
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 37 A; Vsup ≤ 100 V;
unclamped; RGS = 50 Ω
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 30 A;
VDS = 50 V; see Figure 14
and 15
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 13
Min Typ Max Unit
- - 100 V
- - 37 A
- - 103 W
-55 -
175 °C
- - 59 mJ
- 9 - nC
- 30 - nC
- - 48 mΩ
- 21 26.8 mΩ
1 page  
NXP Semiconductors
PSMN027-100PS
N-channel 100V 26.8 mΩ standard level MOSFET in TO220.
Table 6. Characteristics …continued
Symbol Parameter
Conditions
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 100 °C; see
resistance
Figure 12
VGS = 10 V; ID = 15 A; Tj = 175 °C; see
Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; see
Figure 13
RG internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 30 A; VDS = 50 V; VGS = 10 V; see
Figure 14 and 15
ID = 0 A; VDS = 0 V; VGS = 10 V
QGS
gate-source charge
ID = 30 A; VDS = 50 V; VGS = 10 V; see
Figure 14 and 15
QGS(th)
pre-threshold
gate-source charge
ID = 30 A; VDS = 50 V; VGS = 10 V; see
Figure 14
QGS(th-pl) post-threshold
gate-source charge
QGD
gate-drain charge
ID = 30 A; VDS = 50 V; VGS = 10 V; see
Figure 14 and 15
VGS(pl)
gate-source plateau
voltage
VDS = 50 V; see Figure 14 and 15
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
www.Dtad(toanS)heet4U.ctoumrn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VDS = 50 V; RL = 1.7 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; see
Figure 17
trr reverse recovery time IS = 10 A; dIS/dt = 100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 50 V
Min Typ Max Unit
- - 48 mΩ
- 59 75 mΩ
- 21 26.8 mΩ
- 0.92 - Ω
- 30 - nC
- 24 - nC
- 8 - nC
- 4.8 - nC
- 3.4 - nC
- 9 - nC
- 4.9 - V
- 1624 - pF
- 115 - pF
- 74 - pF
- 14.4 - ns
- 11.4 - ns
- 29.6 - ns
- 8.9 - ns
- 0.8 1.2 V
- 47 - ns
- 91 - nC
PSMN027-100PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 January 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PSMN027-100PS
N-channel 100V 26.8 mΩ standard level MOSFET in TO220.
8. Revision history
Table 7. Revision history
Document ID
Release date
PSMN027-100PS_1
20100122
Data sheet status
Objective data sheet
Change notice
-
Supersedes
-
www.DataSheet4U.com
PSMN027-100PS_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 January 2010
© NXP B.V. 2010. All rights reserved.
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