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PDF MRF8P9300HSR6 Data sheet ( Hoja de datos )
| Número de pieza | MRF8P9300HSR6 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
hD Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
940 MHz
960 MHz
19.6 35.4
19.6 35.6
19.4 35.8
6.0 - 37.3
6.0 - 37.1
5.9 - 36.7
Document Number: MRF8P9300H
Rev. 0, 11/2009
MRF8P9300HR6
MRF8P9300HSR6
920 - 960 MHz, 100 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ] 326 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
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Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Table 2. Thermal Characteristics
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Value
- 0.5, +70
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
CASE 375D - 05, STYLE 1
NI - 1230
MRF8P9300HR6
CASE 375E - 04, STYLE 1
NI - 1230S
MRF8P9300HSR6
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW, 28 Vdc, IDQ = 2400 mA
Case Temperature 80°C, 300 W CW, 28 Vdc, IDQ = 2400 mA
RθJC
0.22
0.20
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
1
1 page  
Devices are tested in a
parallel configuration
Single−ended
l
l 4 Quadrature combined
4
l
4 Doherty
ll
2 2 Push−pull
Figure 3. Possible Circuit Topologies
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RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
5
5 Page 
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RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet MRF8P9300HSR6.PDF ] | |
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