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PDF TPC6003 Data sheet ( Hoja de datos )
| Número de pieza | TPC6003 | |
| Descripción | Silicon N Channel MOS Type (U-MOSIII) | |
| Fabricantes | Toshiba Semiconductor | |
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TPC6003
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6003
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
6
24
2.2
0.7
5.8
3
0.22
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol Max Unit
654
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8
178.5
°C/W
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
123
1 2007-01-15
1 page  
RDS (ON) – Ta
50
Common source
Pulse test
40
ID = 6 A
ID = 1.5 A, 3 A
30
VGS = 4.5 V
20
ID = 1.5 A, 3 A, 6 A
VGS = 10 V
10
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC6003
www.DataSheet4U.com
100
30
10
3
1
0.3
0.1
0
IDR – VDS
−0.4
−0.8
−1.2
Common source
Ta = 25°C
Pulse test
−1.6 −2.0
Drain-source voltage VDS (V)
10000
3000
1000
Capacitance – VDS
Ciss
300
100
Common source
30 VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1 0.3
1
Coss
Crss
3 10 30 100
Drain-source voltage VDS
Vth – Ta
3.5
Common source
3.0 VDS = 10 V
ID = 1 mA
Pulse test
2.5
2.0
1.5
1.0
0.5
0
−80
−40 0
40 80 120
Ambient temperature Ta (°C)
160
2.5
(1) t = 5 s
2
1.5
(1) DC
1
(2) t = 5 s
0.5
(2) DC
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output characteristics
50
Common source
ID = 6 A
40 Ta = 25°C
Pulse test
25
20
30
VDD = 24 V
12 V
6V
15
VGS
20
12 V
6V
10
VDD = 24 V
10
5
00
0 8 16 24 32 40
Total gate charge Qg (nC)
5 2007-01-15
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC6003.PDF ] | |
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