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Número de pieza | DZT591C | |
Descripción | PNP SURFACE MOUNT TRANSISTOR | |
Fabricantes | Diodes | |
Logotipo | ||
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No Preview Available ! DZT591C
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DZT491)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 3)
Mechanical Data
• Case: SOT-223
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.115 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
Base Current
Power Dissipation (Note 3)
Operating and Storage Temperature Range
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4 2 C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Pd
Tj, TSTG
Value
-80
-60
-5
-1
-2
-200
1
-55 to +150
Unit
V
V
V
A
A
mA
W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
www.DSaMtAaSLhLeSeItG4UNA.cLomCHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Symbol Min Typ Max
ICBO
⎯ ⎯ -100
IEBO
⎯ ⎯ -100
ICES
⎯ ⎯ -100
V(BR)CBO -80
⎯
⎯
V(BR)CEO -60
⎯
⎯
V(BR)EBO -5
⎯
⎯
VCE(SAT)
hFE
VBE(SAT)
VBE(on)
⎯
⎯
100
100
80
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.3
-0.6
⎯
300
⎯
⎯
-1.2
-1
fT
Cobo
150 ⎯
⎯ 13
⎯
⎯
Unit Test Conditions
nA VCB = -60V
nA VEB = -4V
nA VCES = -60V
V IC = 100μA
V IC = 10mA
V IE = 100μA
V IC = -500mA, IB = -50mA
V IC = -1A, IB = -100mA
⎯ VCE = -5V, IC = -1mA
⎯ VCE = -5V, IC = -500mA
⎯ VCE = -5V, IC = -1A
⎯ VCE = -5V, IC = -2A
V IC = -1A, IB = -100mA
V IC = -1A, VCE = -5V
MHz VCE = -10V, IC = -50mA, f = 100MHz
pF VCB = -10V, f =1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle ≤ 2%.
DS31127 Rev. 2 - 2
1 of 4
www.diodes.com
DZT591C
© Diodes Incorporated
1 page |
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