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PDF DZT591C Data sheet ( Hoja de datos )

Número de pieza DZT591C
Descripción PNP SURFACE MOUNT TRANSISTOR
Fabricantes Diodes 
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DZT591C
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DZT491)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 3)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Continuous Current (Note 3)
Peak Collector Current
Base Current
Power Dissipation (Note 3)
Operating and Storage Temperature Range
3
2
1
4
SOT-223
3E
COLLECTOR
2,4
C4 2 C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Pd
Tj, TSTG
Value
-80
-60
-5
-1
-2
-200
1
-55 to +150
Unit
V
V
V
A
A
mA
W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
www.DSaMtAaSLhLeSeItG4UNA.cLomCHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Symbol Min Typ Max
ICBO
⎯ ⎯ -100
IEBO
⎯ ⎯ -100
ICES
⎯ ⎯ -100
V(BR)CBO -80
V(BR)CEO -60
V(BR)EBO -5
VCE(SAT)
hFE
VBE(SAT)
VBE(on)
100
100
80
15
-0.3
-0.6
300
-1.2
-1
fT
Cobo
150
13
Unit Test Conditions
nA VCB = -60V
nA VEB = -4V
nA VCES = -60V
V IC = 100μA
V IC = 10mA
V IE = 100μA
V IC = -500mA, IB = -50mA
V IC = -1A, IB = -100mA
VCE = -5V, IC = -1mA
VCE = -5V, IC = -500mA
VCE = -5V, IC = -1A
VCE = -5V, IC = -2A
V IC = -1A, IB = -100mA
V IC = -1A, VCE = -5V
MHz VCE = -10V, IC = -50mA, f = 100MHz
pF VCB = -10V, f =1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle 2%.
DS31127 Rev. 2 - 2
1 of 4
www.diodes.com
DZT591C
© Diodes Incorporated

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