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PDF 3VD182600YL Data sheet ( Hoja de datos )
| Número de pieza | 3VD182600YL | |
| Descripción | HIGH VOLTAGE MOSFET CHIPS | |
| Fabricantes | Silan Microelectronics | |
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3VD182600YL
3VD182600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø 3VD182600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
Ø Advanced termination scheme to provide enhanced
voltage-blocking capability.
Ø Avalanche Energy Specified
Ø Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Ø The chips may packaged in TO-92DT-3L type and the
typical equivalent product is 1N60C.
Ø The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
Ø Die size: 1.90mm*1.75mm.
Ø Chip Thickness: 300±20µm.
Ø Top metal : Al, Backside Metal : Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
TJ
Tstg
Ratings
600
±30
800
150
-55-150
Unit
V
V
mA
www.DataSheet4U.net
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward on
Voltage
Symbol
V(BR)DSS
Vth(GS)
lGSS
IDSS
RDS(on)
VFSD
Test conditions
ID=250uA
ID=250uA VDS=VGS
VGS=±30V, VDS=0V
VDS=600V, VGS=0V
ID=0.5A, VGS=10V
ID=1.0A,VGS=0V
Min Typ Max Unit
600 --- ---- V
2 --- 4 V
--- --- ±100 nA
--- ---
1 µA
--- --- 12
--- --- 1.50 V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.08.02
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