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부품번호 | IXZ4DF18N50 기능 |
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기능 | RF Power MOSFET & DRIVER | ||
제조업체 | IXYS Corporation | ||
로고 | |||
www.DataSheet.co.kr
IXZ4DF18N50
RF Power MOSFET & DRIVER
Driver / MOSFET Combination
DEIC-515 Driver combined with IXZ318N50 MOSFET
Gate driver matched to MOSFET
500 Volts
19 A
0.29 Ohms
Features
• Isolated substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low Rds(ON)
• Very low insertion inductance(<2nH)
• No beryllium oxide (BeO) or other hazardous materials
• Built using the advantages and compatibility of CMOS and IXYS
HDMOS™ processes
• Latch-up protected
• Low quiescent supply current
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
• Single package reduces size and heat sink area
Applications
• Class D or E Switching
Amplifier
• Multi MHz Switch Mode
Power Supplies (SMPS)
Description
The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination
specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The
IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of less
than 4ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire
operating range. Designed with small internal delays, the IXZ4DF18N50 is suitable for higher power operation
where combiners are used. Its features and wide safety margin in operating voltage and power make the
IXZ4DF18N50 unmatched in performance and value.
The IXZ4DF18N50 is packaged in DEI's low inductance RF package incorporating DEI's RF layout techniques
to minimize stray lead inductances for optimum switching performance. The IXZ4DF18N50 is a surface-
mountable device.
Figure 1.
Functional Diagram
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
IXZ4DF18N50
RF Power MOSFET & DRIVER
Fig. 8
4
Rise Time vs. Supply Voltage
ID = 0.5 IDM
3.5
3
2.5
2
5
Fig. 10
3
10 15 20
VCC / VCCIN / IN (V)
Rise Time vs. Temperature
ID = 0.5 IDM, VCC / VCCIN / IN = 15V
2.5
2
1.5
1
20 70 120
Temperature °C
25
170
Fig. 12
O u tp u t C a p a c ita n ce vs . VD S Vo lta g e
10000
1000
100
C OSS
10
Fig. 9
12
10
8
6
4
2
0
5
Fig. 11
3
Fall Time vs. Supply Voltage
ID = 0.5 IDM
10 15 20
VCC / VCCIN / IN (V)
Fall Time vs. Temperature
ID = 0.5 IDM, VCC / VCCIN / IN = 15V
25
2.5
2
1.5
20
Fig. 13
10
1
70 120
Temperature °C
VCC Supply Current vs. Frequency
Driver Section
170
20V
15V
8V
0.1
1
0 100 200 300 400 500
VD S (V)
0.01
0
10 20 30 40
Frequency (MHz)
50
Datasheet pdf - http://www.DataSheet4U.net/
4페이지 www.DataSheet.co.kr
Fig. 16 IXZ4DF18N50 Package Outline
IXZ4DF18N50
RF Power MOSFET & DRIVER
IXYS RF
An IXYS Company
2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526
Tel: 970-493-1901; Fax: 970-493-1903
e-mail: [email protected]
www.directedenergy.com
Datasheet pdf - http://www.DataSheet4U.net/
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IXZ4DF18N50 | RF Power MOSFET & DRIVER | IXYS Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |