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PDF AT42QT2160 Data sheet ( Hoja de datos )
| Número de pieza | AT42QT2160 | |
| Descripción | 16-key QMatrix Touch Sensor IC | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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Atmel AT42QT2160
16-key QMatrix Touch Sensor IC
DATASHEET
Features
Number of keys:
up to 16 keys, and one slider (constructed from 2 to 8 keys)
Technology:
patented spread-spectrum charge-transfer (transverse mode)
Number of I/O lines:
11 (3 dedicated – configurable for input or output, 8 shared – output only)
PWM control for LED driving
Key outline sizes:
6 mm × 6 mm or larger (panel thickness dependent); widely different sizes and
shapes possible
Key spacings:
8 mm or wider, center to center (panel thickness dependent)
Slider design:
2 to 8 keys placed in sequence, same design as keys
Electrode design:
two-part electrode shapes (drive-receive); wide variety of possible layouts
PCB layers required:
one layer (with jumpers), two layers (no jumpers)
Electrode materials:
PCB, FPCB, silver or carbon on film, ITO on film
Panel materials:
plastic, glass, composites, painted surfaces (low particle density metallic
paints possible)
Adjacent metal:
compatible with grounded metal immediately next to keys
Panel thickness:
up to 3 mm glass, 2.5 mm plastic (key size dependent)
Key sensitivity:
individually settable via simple commands over I2C-compatible interface
Interface:
I2C-compatible slave mode (100 kHz)
Moisture tolerance:
Increased moisture tolerance based on hardware design and firmware tuning
Signal processing:
self-calibration, auto drift compensation, noise filtering
Adjacent Key Suppression® (AKS®) technology
Applications:
Laptop, mobile, consumer appliances, PC peripheral
This datasheet is applicable to revision 4R0 chips only
Operating Voltage:
1.8 V – 5.5 V
Package:
28-pin 4 × 4 mm QFN RoHS compliant
9502C–AT42–09/2014
1 page  
Figure 1-2. Inputs/Outputs
GPIOn
where n = 1 3
GPIOn
where n = 1 3
GPIOn / Xm
where n = 1 3
m =0 7
GPIOn / Xm
where n = 1 3
m =0 7
* Low-pass filter can be added
to filter out burst pulses on
shared GPOs (X0 X7)
AT42QT2160 [DATASHEET]
9502C–AT42–09/2014
5
5 Page 
Figure 3-4. Drive Pulse Roll-off and Dwell Time
X drive
Dwell time
Y gate
Lost charge due to
inadequate settling
before end of dwell time
Dwell time is the duration in which charge coupled from X to Y is captured (Figure 3-4 on page 11). Increasing Rx
values will cause the leading edge of the X pulses to increasingly roll off, causing the loss of captured charge (and
hence loss of signal strength) from the keys.
The dwell time is a minimum of 250 ns. If the X pulses have not settled within 250 ns, key gain will be reduced; if this
happens, either the stray capacitance on the X line(s) should be reduced (by a layout change, for example by
reducing X line exposure to nearby ground planes or traces), or, the Rx resistor needs to be reduced in value (or a
combination of both approaches).
One way to determine X line settling time is to monitor the fields using a patch of metal foil or a small coin over the
key (Figure 3-5 on page 11). Only one key along a particular X line needs to be observed, 250 ns dwell time should
exceed the observed 95% settling of the X-pulse by 25% or more.
In almost all cases, Ry should be set equal to Rx, which will ensure that the charge on the Y line is fully captured into
the Cs capacitor.
Figure 3-5. Probing X-Drive Waveforms With a Coin
AT42QT2160 [DATASHEET]
9502C–AT42–09/2014
11
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