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PDF HFA80FA120 Data sheet ( Hoja de datos )

Número de pieza HFA80FA120
Descripción Soft Recovery Diode
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Bulletin PD-20395 rev. A 01/02
HFA80FA120
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
• Fast Recovery Time Characteristic
• Electrically Isolated Base Plate
• Large Creepage Distance Between Terminal
• Simplified Mechanical Designs, Rapid Assembly
Description/ Applications
The dual diode series configuration (HFA80FA120) is used for output rectification
or frewheeling/ clamping operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from the copper base
plate, allowing for common heatsinks and compact assemblies to be built.
These modules are intended for general applications such as HV power
supplies, electronic welders, motor control and inverters.
VR = 1200V
VF(typ) = 2.6V
IF(AV) = 80A
trr (typ) = 25ns
Absolute Maximum Ratings
Parameters
VR
IF
IFSM
IFRM
PD
VISOL
TJ, TSTG
Cathode-to-Anode Voltage
Continuous Forward Current, TC = 60°C
Per Leg
Single Pulse Forward Current, TJ = 25°C
Per Leg
Maximum Repetitive Forward Current, Rated VR,
Square wave, 20KHz, TC = 60°C
Max Power Dissipation, TC = 100°C
Max Power Dissipation, TC = 25°C
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Operating Junction and Storage Temperatures
Max
1200
40
400
72
71
178
2500
- 55 to 150
Units
V
A
W
V
°C
Case Styles
HFA80FA120
K2 A2
www.irf.com
SOT-227
K1 A1
1
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HFA80FA120 pdf
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HFA80FA120
Bulletin PD-20395 rev. A 01/02
VR = 200V
L = 70µH
0.01
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
1 dif /dt
2 I RRM
Qrr 4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1. diF/dt - Rate of change of current through
zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from
zero crossing point of negative going IF to
point where a line passing through 0.75 IRRM
and 0.50 IRRM extrapolated to zero current
4. Qrr - Area under curve defined by
t rr and IRRM
Q
rr =
t rr x I
2
RRM
5. di (rec) M / dt - Peak rate of change
of current during t b portion of t rr
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
SOT-227 Package Details
4.40 (.173 )
4.20 (.165 )
4
12.50 ( .492 )
1
7.50 ( .295 )
2.10 ( .082 )
1.90 ( .075 )
38.30 ( 1.508 )
37.80 ( 1.488 )
-A-
CHAMFER
2.00 ( .079 ) X 457
3
6.25 ( .246 )
2
25.70 ( 1.012 )
25.20 ( .992 )
-B-
R FULL
15.00 ( .590 )
LEAD ASSIGMENTS
EC
EG
IGBT
SD
4 LEAD ASS3IGNMENTS
1 AK122 AK22
SG
4HEXFET
3
A1 K2
43
12
K1 A2
HEXFRED
12
KK11 A12
HEXFRED
30.20 ( 1.189 )
29.80 ( 1.173 )
4X
8.10 ( .319 )
7.70 ( .303 )
0.25 ( .010 ) M C A M B M
2.10 ( .082 )
1.90 ( .075 )
-C-
0.12 ( .005 )
12.30 ( .484 )
11.80 ( .464 )
www.irf.com
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