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Datasheet CMSH1-40HE Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CMSH1-40HE | SURFACE MOUNT SILICON SCHOTTKY RECTIFIER CMSH1-40HE CMSH1-60HE CMSH1-80HE
CMSH1-100HE CMSH1-150HE CMSH1-200HE
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT SILICON SCHOTTKY RECTIFIER 1 AMP, 40 THRU 200 VOLTS
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH1-40HE Series 1.0 Amp Surface Mount Silicon Schottky Rectifier is a high quality, |  Central Semiconductor | rectifier |
CMS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CMS-S032-020 | SCHOTTKY BARRIER DIODE
CMS-S032-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B)) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me  Champion Microelectronic diode | | |
| 2 | CMS-S032-040 | SCHOTTKY BARRIER DIODE
CMS-S032-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.814 * 0.814 mm
2
Bond Pad size(B) :
0.686 * 0.686 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 3 | CMS-S035-020 | SCHOTTKY BARRIER DIODE
CMS-S035-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 4 | CMS-S035-040 | SCHOTTKY BARRIER DIODE
CMS-S035-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
0.889 * 0.889 mm
2
Bond Pad size(B) :
0.762 * 0.762 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 5 | CMS-S040-020 | SCHOTTKY BARRIER DIODE
CMS-S040-020
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Met Champion Microelectronic diode | | |
| 6 | CMS-S040-040 | SCHOTTKY BARRIER DIODE CMS-S040-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode  Champion diode | | |
| 7 | CMS-S040-040L | SCHOTTKY BARRIER DIODE
CMS-S040-040L
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Me Champion Microelectronic diode | |
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