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7N80 데이터시트 PDF




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부품번호 7N80 기능
기능 800V N-CHANNEL POWER MOSFET
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7N80 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
7N80
Power MOSFET
7A, 800V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
The UTC 7N80 is an N-channel mode power MOSFET using UTC’s
advanced technology to provide customers with planar stripe and
DMOS technology. This technology specializes in allowing a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation mode.
The UTC 7N80 is universally applied in high efficiency switch mode
power supply.
TO-220
1
TO-220F1
FEATURES
* RDS(on)<1.8@ VGS =10V
* High switching speedY
* 100% avalanche tested
SYMBOL
2.Drain
1
TO-220F3
1
TO-220F
1
TO-220F2
1
TO-263
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
7N80L-TA3-T
7N80G-TA3-T
TO-220
7N80L-TF3-T
7N80G-TF3-T
TO-220F
7N80L-TF1-T
7N80G-TF1-T
TO-220F1
7N80L-TF2-T
7N80G-TF2-T
TO-220F2
7N80L-TF3T-T
7N80G-TF3T-T
TO-220F3
7N80L-TQ2-T
7N80G-TQ2-T
TO-263
7N80L-TQ2-R
7N80G-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-523.H




7N80 pdf, 반도체, 판매, 대치품
7N80
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
VDS=640V, TC=125°C
Gate-Source Leakage Current
Forward
Reverse
IGSS
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=3.3A
VDS=50V, ID=3.3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=120V, VGS=10V, ID=6.6A
IG=3.3mA (Note 1,2)
VDD=400V, ID=6.6A, RG=25
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =6.6A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr VGS=0V, IS=6.6A,
QRR dIF/dt=100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN
800
3.0
TYP MAX UNIT
V
0.93 V/°C
10 µA
100 µA
100 nA
-100 nA
5.0
1.3 1.8
5.5
V
S
1200 1680
120 155
17 22
pF
pF
pF
155 160 nC
11 nC
23 nC
65 80 ns
100 140 ns
300 320 ns
125 150 ns
6.6 A
26.4 A
1.4 V
650 ns
7.0 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N80 전자부품, 판매, 대치품
7N80
TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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