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PDF AP50L02P Data sheet ( Hoja de datos )
| Número de pieza | AP50L02P | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP50L02P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP50L02S/P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching
Description
G
D
S
BVDSS
RDS(ON)
ID
25V
17mΩ
40A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP50L02P) is available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
http://www.DataSheet4U.net/
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G D S TO-263(S)
G
D
S
Rating
25
± 20
40
27
140
44.6
0.36
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200218032
datasheet pdf - http://www.DataSheet4U.net/
1 page  
AP50L02S/P
16
I D =20A
14
V DS =12V
12 V DS =16V
V DS =20V
10
8
6
4
2
0
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
30
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
1000
Ciss
Coss
100 Crss
10
1
6 11 16 21 26
V DS (V)
Fig 10. Typical Capacitance Characteristics
http://www.DataSheet4U.net/
100 3
10
T j =150 o C
1
T j =25 o C
2
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50 0 50 100 150
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP50L02P.PDF ] | |
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