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Número de pieza | MSD601-RT1 | |
Descripción | (MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MSD601-RT1 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR TECHNICAL DATA
NPN General Purpose Amplifier
Transistors Surface Mount
COLLECTOR
3
Order this document
by MSD601–RT1/D
MSD601-RT1
MSD601-ST1
*Motorola Preferred Device
*
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
2
BASE
1
EMITTER
Value
Unit
Collector–Base Voltage
V(BR)CBO
60
Vdc
Collector–Emitter Voltage
V(BR)CEO
50
Vdc
Emitter–Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current — Continuous
IC 100 mAdc
Collector Current — Peak
IC(P)
200 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Power Dissipation
PD 200 mW
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg
– 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0)
V(BR)CBO
V(BR)EBO
Collector–Base Cutoff Current (VCB = 45 Vdc, IE = 0)
ICBO
Collector–Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)
DC Current Gain(1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601–RT1
MSD601–ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
ICEO
hFE1
hFE2
Collector–Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
VCE(sat)
Min
50
60
7.0
—
—
210
290
90
—
DEVICE MARKING
Marking Symbol
2
1
3
CASE 318D–03, STYLE 1
SC–59
Max Unit
— Vdc
— Vdc
— Vdc
0.1 µAdc
100 nAdc
—
340
460
—
0.5 Vdc
YRX
YSX
MSD601–RT1
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MSD601-RT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
MSD601-RT1 | (MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount | ETL |
MSD601-RT1 | (MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount | Motorola Semiconductors |
MSD601-RT1 | (MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount | Leshan Radio Company |
MSD601-RT1 | (MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount | ON Semiconductor |
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