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2SA1822 PDF 데이터시트 ( Data , Function )

부품번호 2SA1822 기능
기능 Silicon NPN Triple Diffused Type TRANSISTOR
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2SA1822 데이터시트, 핀배열, 회로
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SA1822
High-Voltage Switching Applications
High-Speed DC-DC Converter Application
2SA1822
Unit: mm
Excellent switching times
: ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = 0.3 A
High collector breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
400
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO 7 V
Collector current
IC 1 A
Base current
IB 0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
25
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09




2SA1822 pdf, 반도체, 판매, 대치품
2SA1822
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IC – VCE
100 50 30
Common emitter
Tc = 25°C
20
16
12
8
IB = 4 mA
0
0 2 4 6 8 10 12 14
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3 Common emitter
IC/IB = 10
1
1.2
1.0
Common emitter
VCE = 5 V
IC – VBE
0.8
0.6
0.4
Tc = 125°C
25 55
0.2
0
0 0.2 0.4 0.6 0.8
Base-emitter voltage VBE (V)
1.0
VBE (sat) – IC
10
Common emitter
IC/IB = 10
3
0.3
0.1
0.07
30
Tc = 125°C
25
55
100
300
Collector current IC (mA)
1000
hFE – IC
300
Common emitter
VCE = 5 V
Tc = 125°C
100 25
55
30
10
30
100
300
Collector current IC (mA)
1000
1
0.3
30
Tc = 55°C
25
125
100
300
Collector current IC (mA)
1000
Switching Characteristics
10
IC/IB = 10
IB1 = IB2
tstg Pulse width = 20 µs
3 Duty cycle 1%
Tc = 25°C
1
ton
tf
0.3
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2
Collector current IC (A)
4 2006-11-09

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