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Número de pieza | TPC6109-H | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba | |
Logotipo | ||
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No Preview Available ! TPC6109-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC6109-H
High-Efficiency DC-DC Converter Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.)
(VDS = −10 V)
• High forward transfer admittance: |Yfs| = 8.0 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (t = 5 s) (Note 2a)
Drain power dissipation (t = 5 s) (Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
(Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−30
−30
±20
−5
−20
2.2
0.7
16.3
−5
0.055
150
−55 to150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8 °C/W
178.5 °C/W
Note: For Notes 1 to 5, see page 3.
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
654
123
1 2010-02-01
Free Datasheet http://www.datasheet4u.com/
1 page 100
Common source
Pulse test
80
RDS (ON) – Ta
−2.5 A
ID = −5 A
−1.2A
60
VGS = −4.5
40
ID = −5 , −2.5 , −1.2 A
20 VGS = −10 V
0
−80 −40 0 40 80 120 160
Ambient temperature Ta (°C)
TPC6109-H
IDR – VDS
−100
−5 V
−10 V
−10
−3 V
−1 V
VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2 0.4 0.6 0.8
1 1.2
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
Coss
100
Crss
Common source
VGS = 0 V
f = 1 MHz
10 Ta = 25°C
−0.1
−1
−10
Drain-source voltage VDS (V)
−100
Vth – Ta
−2
Common source
VDS = −10 V
ID = −1mA
−1.5
Pulse test
−1
−0.5
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
2.5
(1) t = 5 s
2
PD – Ta
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
1.5
(1) DC
1
(2) t = 5 s
0.5
(2) DC
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic Input/Output Characteristics
−40 Common source
−35
ID = −5A
Ta = 25°C
Pulse test
−30
−25 VDD = −24 V
−20
−15 −12 V
−10
−6 V
−5
VDS
−6V −12V
VDD = −24 V
VGS
−16
−14
−12
−10
−8
−6
−4
−2
00
0 2 4 6 8 10 12 14 16
Total gate charge Qg (nC)
5 2010-02-01
Free Datasheet http://www.datasheet4u.com/
5 Page |
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