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PDF TPC6109-H Data sheet ( Hoja de datos )

Número de pieza TPC6109-H
Descripción Field Effect Transistor
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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TPC6109-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC6109-H
High-Efficiency DC-DC Converter Applications
Small footprint due to small and thin package
Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.)
(VDS = 10 V)
High forward transfer admittance: |Yfs| = 8.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (t = 5 s) (Note 2a)
Drain power dissipation (t = 5 s) (Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
(Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
5
20
2.2
0.7
16.3
5
0.055
150
55 to150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
JEDEC
JEITA
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8 °C/W
178.5 °C/W
Note: For Notes 1 to 5, see page 3.
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
654
123
1 2010-02-01
Free Datasheet http://www.datasheet4u.com/

1 page




TPC6109-H pdf
100
Common source
Pulse test
80
RDS (ON) – Ta
2.5 A
ID = −5 A
1.2A
60
VGS = −4.5
40
ID = −5 , 2.5 , 1.2 A
20 VGS = −10 V
0
80 40 0 40 80 120 160
Ambient temperature Ta (°C)
TPC6109-H
IDR – VDS
100
5 V
10 V
10
3 V
1 V
VGS = 0 V
1
0.1
0
Common source
Ta = 25°C
Pulse test
0.2 0.4 0.6 0.8
1 1.2
Drain-source voltage VDS (V)
Capacitance – VDS
1000
Ciss
Coss
100
Crss
Common source
VGS = 0 V
f = 1 MHz
10 Ta = 25°C
0.1
1
10
Drain-source voltage VDS (V)
100
Vth – Ta
2
Common source
VDS = −10 V
ID = −1mA
1.5
Pulse test
1
0.5
0
80 40
0
40 80 120 160
Ambient temperature Ta (°C)
2.5
(1) t = 5 s
2
PD – Ta
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
1.5
(1) DC
1
(2) t = 5 s
0.5
(2) DC
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic Input/Output Characteristics
40 Common source
35
ID = −5A
Ta = 25°C
Pulse test
30
25 VDD = −24 V
20
15 12 V
10
6 V
5
VDS
6V 12V
VDD = −24 V
VGS
16
14
12
10
8
6
4
2
00
0 2 4 6 8 10 12 14 16
Total gate charge Qg (nC)
5 2010-02-01
Free Datasheet http://www.datasheet4u.com/

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