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PDF TPC6011 Data sheet ( Hoja de datos )
| Número de pieza | TPC6011 | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPC6011 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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TPC6011
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TPC6011
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.)
( VGS = 10V)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
Tch
Tstg
30
30
±20
6
24
2.2
0.7
2.3
3
150
−55 to 150
V
V
V
A
W
W
mJ
A
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8
178.5
°C/W
°C/W
Note: (Note 1), (Note 2), (Note 3): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
654
123
1 2010-02-15
Free Datasheet http://www.datasheet4u.com/
1 page  
50
Common source
Pulse test
40
RDS (ON) – Ta
ID = 1.5, 3, 6 A
30
VGS = 4.5 V
20
10
VGS = 10 V
ID = 1.5, 3, 6 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC6011
IDR – VDS
100
Common source
Ta = 25°C
Pulse test
10
4.5
10 2 1 VGS = 0 V
1
0
−0.4
−0.8
−1.2
−1.6
Drain-source voltage VDS (V)
1000
Capacitance – VDS
Ciss
100 Coss
Crss
Common source
VGS = 0 V
f = 1 MHz
10 Ta = 25°C
0.1
1
10
Drain-source voltage VDS
100
Vth – Ta
4
Common source
VDS = 10 V
ID = 1 mA
Pulse test
3
2
1
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
2.5
(1) t = 5 s
2
1.5
(1) DC
1
(2) t = 5 s
0.5
(2) DC
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output characteristics
30
25 VDD = 24 V
30
Common source
ID = 6 A
Ta = 25°C
Pulse test
25
20
15
12
10
6
5
20
VGS
12 6
15
VDD = 24 V
10
5
00
0 4 8 12 16 20
Total gate charge Qg (nC)
5 2010-02-15
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC6011.PDF ] | |
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