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PDF MUN2215T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN2215T1 | |
| Descripción | NPN SILICON BIAS RESISTOR TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN2211T1/D
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
R1
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
PIN2 R2
BASE
(INPUT)
PIN3
COLLECTOR
(OUTPUT)
PIN1
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
MUN2211T1
SERIES
Motorola Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
2
1
CASE 318D–03, STYLE 1
(SC–59)
Value
Unit
Collector–Base Voltage
Collector–Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCBO
VCEO
IC
PD
50
50
100
*200
1.6
Vdc
Vdc
mAdc
mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
RθJA
TJ, Tstg
TL
625
– 65 to +150
260
10
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1(2)
MUN2216T1(2)
MUN2230T1(2)
MUN2231T1(2)
MUN2232T1(2)
MUN2233T1(2)
MUN2234T1(2)
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
REV 4
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
1
IC/IB = 10
0.1
0.01
MUN2211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2212T1
TA = –25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.001
0
20 40 60
IC, COLLECTOR CURRENT (mA)
80
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 100 75°C 25°C
f = 1 MHz
IE = 0 V
10
TA = –25°C
3 TA = 25°C
1
2
0.1
1
0.01
00
10
20 30
40
50
0.001
0
2
46
VO = 5 V
8
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = –25°C
75°C 25°C
0.1
0 10
20
30
40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page 
PACKAGE DIMENSIONS
MUN2211T1 SERIES
A
L
3
S
21
B
D
G
C
H
J
K
CASE 318D–03
ISSUE E
SC–59
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 2.70 3.10 0.1063 0.1220
B 1.30 1.70 0.0512 0.0669
C 1.00 1.30 0.0394 0.0511
D 0.35 0.50 0.0138 0.0196
G 1.70 2.10 0.0670 0.0826
H 0.013 0.100 0.0005 0.0040
J 0.10 0.26 0.0040 0.0102
K 0.20 0.60 0.0079 0.0236
L 1.25 1.65 0.0493 0.0649
S 2.50 3.00 0.0985 0.1181
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MUN2215T1.PDF ] | |
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