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PDF DZ5X068D Data sheet ( Hoja de datos )
| Número de pieza | DZ5X068D | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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DZ5X068D
Silicon epitaxial planar type
For surge absorption circuits
Features
Excellent rising characteristics of zener current IZ
Low zener operating resistance RZ
Halogen-free / RoHs compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 02
Basic Part Number
Dual DZ3X068D (Common anode)
Packaging
DZ5X068D0R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Total power dissipation *1
PT
Electrostatic discharge *2
ESD
Rating
200
±10
Unit
mW
kV
Junction temperature
Tj 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *1: Mounted on glass epoxy print board. (45 mm × 45 mm × 1 mm)(4 diode total)
Solder in (0.7 mm × 1.0 mm)
*2: Test method:IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge:10 times)
1: Cathode -1
2: Anode-1, 2, 3, 4
3: Cathode -2
Panasonic
JEITA
Code
4: Cathode -3
5: Cathode -4
Mini5-G3-B
SC-74A
MO-178
54
123
Common Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Zener voltage *1,2
VF IF = 10 mA
VZ IZ = 5 mA
1.0 V
6.46 7.14 V
Zener operating resistance
RZ IZ = 5 mA
30
Zener rise operating resistance
RZK IZ = 0.5 mA
60
Reverse current
Temparature coefficient of zener voltage *3
IR VR = 4.0 V
SZ IZ = 5 mA
0.1 µA
3.1 mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: July 2012
Ver. BED
1
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