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PDF AOT11C60 Data sheet ( Hoja de datos )
| Número de pieza | AOT11C60 | |
| Descripción | 11A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOT11C60/AOB11C60/AOTF11C60
600V,11A N-Channel MOSFET
General Description
Product Summary
The AOT11C60 & AOB11C60 & AOTF11C60 are
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
For Halogen Free add "L" suffix to part number:
AOT11C60L & AOB11C60L & AOTF11C60L
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
TO-263
D2PAK
D
700
80A
< 0.4Ω
30nC
5.1µJ
D
AOT11C60
S
D
G
AOTF11C60
S
GD
G
AOB11C60
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT11C60/AOB11C60
AOTF11C60
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C,J
Repetitive avalanche energy C,J
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
11 11*
9 9*
80
11
60
750
100
20
TC=25°C
Power Dissipation B Derate above 25oC
PD
278
2.2
50
0.4
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TL
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT11C60/AOB11C60
65
0.5
0.45
AOTF11C60
65
--
2.5
G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.2.0 July 2013
www.aosmd.com
Page 1 of 6
http://www.Datasheet4U.com
1 page  
AOT11C60/AOB11C60/AOTF11C60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.45°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)11C60 (Note F)
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11C60(Note F)
100
Rev.2.0 July 2013
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOT11C60.PDF ] | |
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