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PDF AM2300 Data sheet ( Hoja de datos )
| Número de pieza | AM2300 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | AXElite | |
| Logotipo |  |
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AM2300
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
20V/6A
,
RDS(ON)=35mΩ(typ.)
@
V =10V
GS
RDS(ON)=45mΩ(typ.) @ VGS=4.5V
RDS(ON)=115mΩ(typ.) @ VGS=2.5V
• Super High Dense Cell Design for Extremely
Low RDS(ON)
• Reliable and Rugged
• SOT-23 Package
Applications
• Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
D
GS
Top View of SOT-23
Ordering and Marking Information
AM2300
Packing
Package
Package
R : SOT23-3L
Packing
Blank : Tube
A : Taping
AM2300 :
A0XXX
XXX – Date Code
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
20
±12
6
20
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Unit
V
A
AX EL I TE reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
1
1 page  
Typical Characteristics
AM2300
Source-Drain Diode Forward Voltage
20
10
TJ=150°C
TJ=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain Voltage (V)
14
12
10
8
6
4
2
0
0.01
Single Pulse Power
0.1 1 10
Time (sec)
100
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
0.01 0.1
1
Square Wave Pulse Duration (sec)
10
100
5
Axelite Confidential Materials, do not copy or distribute without written consent.
Rev.1.1 Jan.09, 2012
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM2300.PDF ] | |
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