|
|
PDF AOTF11N60L Data sheet ( Hoja de datos )
| Número de pieza | AOTF11N60L | |
| Descripción | 11A N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AOTF11N60L (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
General Description
Product Summary
The AOT11N60 & AOTF11N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche
capability these parts can be adopted quickly into new
and existing offline power supply designs.
For Halogen Free add "L" suffix to part number:
AOT11N60L & AOTF11N60L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
700V@150℃
11A
< 0.65Ω
D
AOT11N60
DS
G AOTF11N60
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT11N60
11
8
272
2.2
AOT11N60
65
0.5
0.46
AOTF11N60
600
±30
11*
8*
39
4.8
345
690
5
50
0.4
-55 to 150
300
AOTF11N60
65
--
2.5
G
S
AOTF11N60L
11*
8*
37.9
0.3
AOTF11N60L
65
--
3.3
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: Jan 2012
www.aosmd.com
Page 1 of 6
1 page  
AOT11N60/AOTF11N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.46°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD
0.01
Single Pulse
Ton
T
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT11N60(Note F)
1
10
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F)
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF11N60 (Note F)
100
Rev0: Jan 2012
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOTF11N60L.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AOTF11N60 | 11A N-Channel MOSFET | Alpha & Omega Semiconductors |
| AOTF11N60L | 11A N-Channel MOSFET | Alpha & Omega Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |