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PDF TPC6113 Data sheet ( Hoja de datos )
| Número de pieza | TPC6113 | |
| Descripción | Field Effect Transistor Silicon P Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC6113
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC6113
Lithium Ion Battery Applications
Power Management Switch Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.)
( VGS = −4.5V)
• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −0.2 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
Tch
Tstg
−20
−20
±12
−5
−20
2.2
0.7
1.6
−2.5
150
−55 to 150
V
V
V
A
W
W
mJ
A
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8 °C/W
178.5 °C/W
Note: (Note 1), (Note 2), (Note 3) : See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Circuit Configuration
654
123
1 2009-12-26
1 page  
RDS (ON) – Ta
200
Common source
Pulse test
150
100 ID = −1.25, −2.5, −5 A
VGS = −2.5 V
50
VGS = −4.5 V
ID = −1.25, −2.5, −5 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC6113
−100
IDR – VDS
Common source
Ta = 25°C
Pulse test
−10 −4
−2
−1
VGS = 0 V
−1
0 0.4 0.8 1.2 1.6 2
Drain−source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
100
Common source
VGS = 0 V
f = 1 MHz
10 Ta = 25°C
−0.1
−1
Coss
Crss
−10
Drain−source voltage VDS (V)
−100
Vth – Ta
−1.5
−1
−0.5
Common source
VDS = −10 V
ID = −0.2 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2.5
(1)
2
PD – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t=5s
1.5
1
(2)
0.5
0
0 40 80 120 160
Ambient temperature Ta (°C)
−20
−16 VDS
Dynamic input/output
characteristics
−10
−8
−12
−8
−4
0
0
−4 −8
−6
VGS
VDD = −16 V
−4
Common source
ID = −5 A
Ta = 25°C
Pulse test
−2
4 8 12 16
Total gate charge Qg (nC)
0
20
5 2009-12-26
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC6113.PDF ] | |
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