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PDF TPC8038-H Data sheet ( Hoja de datos )
| Número de pieza | TPC8038-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPC8038-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPC8038-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 5.0 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 7.6 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 36 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
12
48
1.9
1.0
94
12
0.18
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Downloaded from Elcodis.com electronic components distributor
1
2008-07-04
1 page  
RDS (ON) – Ta
20
Common source
Pulse test
16
ID = 3,6,12 A
12
VGS = 4.5 V
8
VGS = 10 V
4
ID = 3,6,12 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8038-H
IDR – VDS
100
10
4.5
3
10
1
VGS = 0 V
1
Common source
Ta = 25°C
Pulse test
0.1
−0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Coss
Crss
10
0.1 1 10 100
Drain-source voltage VDS (V)
Vth – Ta
3
2.5
2
1.5
1
Common source
0.5 VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t=10s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
ID = 12 A
40
Ta = 25°C
Pulse test
20
16
30
VDS = 24 V
20
12
10
6
VGS
6
12
VDD = 24 V
0
0 5 10 15 20 25
Total gate charge Qg (nC)
12
8
4
0
30
Downloaded from Elcodis.com electronic components distributor
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2008-07-04
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8038-H.PDF ] | |
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