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PDF AP9T15GH-HF Data sheet ( Hoja de datos )

Número de pieza AP9T15GH-HF
Descripción N-channel Enhancement mode Power MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP9T15GH-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
Low Gate Charge
Capable of 2.5V Gate Drive
Single Drive Requirement
RoHS Compliant & Halogen-Free
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP9T15GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
ID
S
20V
50m
12.5A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
PD@TA=25
TSTG
TJ
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
GD
S
TO-251(J)
Rating
20
+16
12.5
8
60
12.5
0.1
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
10
62.5
110
Units
/W
/W
/W
1
201009303

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