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25LV010 PDF 데이터시트 ( Data , Function )

부품번호 25LV010 기능
기능 EM25LV010
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25LV010 데이터시트, 핀배열, 회로
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
General Description
The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single
voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and
a typical 40ms Block-Erase time. The device uses status register to detect the completion of
the Program or Erase operation. To protect against inadvertent write, the device has on-chip
hardware and software data protection schemes. The device offers typical 100,000 cycles
endurance and a greater than 10 years data retention. The EM25LV010 conforms to SPI
Bus compatible Serial Interface. It consisted of four pins (serial clock, chip select, serial data
in, and serial data out) that support high-speed serial data transfers of up to 33MHz. The
Hold pin, Write Protect pin, and Programmable Write Protect features provide flexible control.
The EM25LV010 is offered in 8-lead SO package and known good die (KGD). For KGD,
please contact ELAN Microelectronics or its representatives for detailed information (see
Appendix at the bottom of this specification for Ordering Information).
The EM25LV010 devices are suitable for applications that require memories with convenient
and economical updating of program, data or configurations, e.g., graphic cards, hard disk
drives, networking cards, digital camera printer, LCD monitors, cordless Phones, etc.
Features
Single Power Supply
Full voltage range from 2.7 to 3.6
volts for both read and write operations
Regulated voltage range: 3.0 to 3.6
volts for both read and write operations
Small block Erase Capability
Block: Uniform 32K bytes
Clock Rate
33MHz (Maximum)
Power Consumption
Active Current: 4mA (Typical)
Power-down Mode Standby
current: 1µA (Typical)
Page Program Features
Up to 256 Bytes in 2ms (Typical)
Erase Features
Block-Erase Time: 40ms (Typical)
Chip-Erase Time: 40ms (Typical)
Automatic Write Timing
Internal VPP Generation
SPI Bus Compatible Serial Interface
High Reliability:
Endurance cycles: 100K (Typical)
Data retention: 10 years
Package Option
8-lead-SO (150 mil)
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 1 of 30




25LV010 pdf, 반도체, 판매, 대치품
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
SDO
SPI Interface
w ith(C P O L ,C P H A )
=(0,0) or (1,1)
SDI
SCK
Bus Master
(ST6, ST7, ST9,
ST10, Others)
CS3 CS2 CS1
CQD
CQD
CQD
SPI
M e m o ry
Device
SPI
Memory
Device
SPI
Memory
Device
S# W# HOLD# S# W# HOLD# S# W# HOLD#
Figure 1: Bus Master and Memory Devices on the SPI Bus
C
(CPOL=CPHA=0)
C
(CPOL=CPHA=1)
D MSB
Q
MSB
Figure 2: SPI Modes Supported
This specification is subject to change without further notice. (11.08.2004 V1.0)
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25LV010 전자부품, 판매, 대치품
EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
b7 b0
SRWD 0 0 0 BP1 BP0 WEL BUSY
Status Register Write Protect
Block Protect Bits
Write Enable Latch Bit
BUSY Bit
Table 3: Status Register Format
Status Register
Content
Memory Contents
BP1 Bit BP0 Bit Protected Area
0 0 None
Unprotected Area
All blocks* (4 blocks: 0, 1, 2. & 3)
0 1 Upper quarter (Block 3)
Lower three-quarters (3 blocks: 0 to 2)
1 0 Upper half (2 blocks: 2 and 3)
Lower half (Two blocks: 0 and 1)
1
1 All blocks (4 blocks: 0, 1, 2. & 3)
None
* The device is ready to accept a Chip Erase instruction provided that both Block Protects
(BP1 and BP0) are set to “0”.
Table 4: Protected Area Sizes
This specification is subject to change without further notice. (11.08.2004 V1.0)
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25LV010

EM25LV010

ELAN Microelectronics
ELAN Microelectronics

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