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2SK3984 PDF 데이터시트 ( Data , Function )

부품번호 2SK3984 기능
기능 MOS FIELD EFFECT TRANSISTOR
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2SK3984 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3984
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The 2SK3984 is N-channel MOS Field Effect Transistor
designed for high speed switching applications such as
class-D amplifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3984-ZK
TO-252 (MP-3ZK)
FEATURES
Super low on-state resistance
RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A)
RDS(on) = 85 mΩ MAX. (VGS = 10 V, ID = 9 A)
Low Ciss: Ciss = 750 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
ID(DC)
±18
Drain Current (pulse) Note1
ID(pulse)
±45
Total Power Dissipation (TC = 25°C)
PT1 30
Total Power Dissipation (TA = 25°C)
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Energy Note2
Tstg 55 to +150
EAS 10
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
IAR 10
EAR 10
V
V
A
A
W
W
°C
°C
mJ
A
mJ
(TO-252)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C)
Channel to Ambient Thermal Resistance Rth(ch-A)
125
4.17
°C/W
°C/W
Notes 1. PW 10 μs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
3. Tch(peak) 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17323EJ2V0DS00 (2nd edition)
Date Published April 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Downloaded from Elcodis.com electronic components distributor
2004




2SK3984 pdf, 반도체, 판매, 대치품
50
45
40
35
30
25
20
15
10
5
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
Pulse
d
1 2 3 4 5 6 7 8 9 10
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
8
VDS = 10 V
7 ID = 1 mA
6
5
4
3
2
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
240
220 Pulsed
200
180
160
140
120
100
80 VGS = 10 V
60
40
1
10 100
ID - Drain Current - A
2SK3984
FORWARD TRANSFER CHARACTERISTICS
100
Tch = 150°C
10 125°C
75°C
1 25°C
25°C
0.1 40°C
0.01
0.001
VDS = 10 V
Pulsed
0.0001
0
1 2 3 4 5 6 7 8 9 10
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10 V
Pulsed
1
0.1
Tch = 40°C
25°C
25°C
75°C
125°C
150°C
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
140
Pulsed
120
100
80 ID = 9 A
60 ID = 5 A
40
20
0
4 6 8 10 12 14 16 18 20
VGS - Gate to Source Voltage - V
4 Data Sheet D17323EJ2V0DS
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2SK3984 전자부품, 판매, 대치품
PACKAGE DRAWINGS (Unit: mm)
TO-252 (MP-3ZK)
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
123
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
2SK3984
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D17323EJ2V0DS
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