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부품번호 | B7NK80Z 기능 |
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기능 | STB7NK80Z | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 17 페이지수
STB7NK80Z, STB7NK80Z-1
STP7NK80ZFP, STP7NK80Z
N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK
Zener-protected SuperMESH™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
STB7NK80Z-1
800V
800V
800V
800V
RDS(on)
< 1.8Ω
< 1.8Ω
< 1.8Ω
< 1.8Ω
ID
5.2A
5.2A
5.2A
5.2A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Applications
■ Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
STB7NK80ZT4
STB7NK80Z-1
STP7NK80Z
STP7NK80ZFP
B7NK80Z
B7NK80Z
P7NK80Z
P7NK80ZFP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape e reel
Tube
March 2010
Doc ID 8979 Rev 6
1/17
www.st.com
17
Electrical characteristics
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS Breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
Drain Current (VGS = 0)
Gate-body leakage
Current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID =1 mA, VGS = 0
800
V
VDS = Max rating
VDS = Max rating, TC = 125 °C
1 µA
50 µA
VGS = ± 20 V
± 10 µA
VDS = VGS, ID = 100 µA
3 3.75 4.5 V
VGS = 10 V, ID = 2.6 A
1.5 1.8 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS = 15 V, ID = 2.6 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
-5
1138
- 122
25
S
pF
pF
pF
Coss eq. Equivalent output
(2) capacitance
VDS =0 , VDS = 0 to 640 V
- 50
pF
td(on)
tr
tr(off)
tr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 400 V, ID = 2.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
20
12
-
45
20
ns
ns
ns
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 640 V, ID = 5.2 A,
VGS = 10 V
(see Figure 18)
40 56 nC
-7
nC
21 nC
tr(Voff)
tr
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 640 V, ID = 5.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
12
- 10
20
ns
ns
ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
4/17 Doc ID 8979 Rev 6
4페이지 STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical characteristics
Figure 8. Transconductance
Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
Doc ID 8979 Rev 6
7/17
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