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Datasheet GP20J Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GP20J | GLASS PASSIVATED JUNCTION RECTIFIER GP20A THRU GP20J
GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 600 Volts
* D
Case Style GP20
Forward Current - 2.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass pass | General Semiconductor | rectifier |
2 | GP20J | 2.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts MCC
Features
• • • •
omponents 21201 Itasca Street Chatsworth !"# $
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GP20A THRU GP20M
2.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts
DO-201AE
High temperature metallurgically bonded construction Glass passiv | Micro Commercial Components | rectifier |
3 | GP20J | SINTERED GLASS PASSIVATED JUNCTION RECTIFIER | Zowie Technology Corporation | rectifier |
GP2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GP20 | Paperless Recorder < Yokogawa data | | |
2 | GP200 | PPTC Thermistors GPxxx Series PPTC Thermistors (PPTC Resettable Fuses)
Shenzhen Goodpoly Electron Co., Ltd.
¡÷ ¡÷ ¡÷
Radial leaded devices Very high voltage surge capabilities Available in lead-free version
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Agency Recognition: UL¡¢
TUV
Electrical Characteristics
Model GP070 GP100 GP120 GP-CW120 GP Goodpoly thermistor | | |
3 | GP2001-7R | 120...195 Watt DC-DC Converters P Series
120...195 Watt DC-DC Converters
Input voltage up to 150 V DC 1 to 4 isolated outputs 3.3...96 V DC 4242V DC I/O electric strength test voltage
LGA
• Extremely slim case (4 TE), fully enclosed • Extremely low inrush current, hot swappable • Operating ambient temperature range –40.. Power-One converter | | |
4 | GP200MHS12 | Half Bridge IGBT Module GP200MHS12
GP200MHS12
Half Bridge IGBT Module
Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 2.7 Dynex Semiconductor igbt | | |
5 | GP200MHS18 | Half Bridge IGBT Module GP200MHS18
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
FEATURES
s s s s
Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 200A 400A
APPLICATIONS
s s s s
High Dynex Semiconductor igbt | | |
6 | GP200MKS12 | IGBT Chopper Module Preliminary Information GP200MLK12
GP200MKS12
IGBT Chopper Module Preliminary Information
DS5448-1.2 April 2001
FEATURES
s s s s
Internally Configured With Upper Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(P Dynex Semiconductor igbt | | |
7 | GP200MLS12 | IGBT Chopper Module Preliminary Information GP200MLS12
GP200MLS12
IGBT Chopper Module Preliminary Information
DS5421-1.5 April 2001
FEATURES
s s s s
Internally Configured With Lower Arm Controlled Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(P Dynex Semiconductor igbt | |
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Número de pieza | Descripción | Fabricantes | |
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