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2SC4905

Silicon NPN Bipolar Transistor

Application

VHF & UHF wide band amplifire

Features

• High gain bandwidth product

fT = 5.8 GHz typ

• High gain, low noise figure

PG = 12.0 dB typ,

NF = 1.6 dB typ at f = 900 MHz

CMPAK

3

1

2

1. Emitter

2. Base

3. Collector

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Collector to base voltage

VCBO

20

V

———————————————————————————————————————————

Collector to emitter voltage

VCEO

12

V

———————————————————————————————————————————

Emitter to base voltage

VEBO

2

V

———————————————————————————————————————————

Collector current

IC 50 mA

———————————————————————————————————————————

Collector power dissipation

PC

100 mW

———————————————————————————————————————————

Junction temperature Tj 150 °C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

2SC4905

Power gain vs. collector current

20

VCE = 5V

f = 900 MHz

16

12

8

4

0

12

5 10 20

50

Collector Current I C (mA)

Noise figure vs. collector current

5

VCE = 5V

f = 900MHz

4

3

2

1

0

12

5 10 20

50

Collector Current I C (mA)

S21 parameter vs. collector current

20

VCE = 5V

f = 1 GHz

16

12

8

4

0

12

5 10 20

50

Collector Current I C (mA)