PDF SGN01G64C1CQ1SA-DCRT Data sheet ( Hoja de datos )

Número de pieza	SGN01G64C1CQ1SA-DCRT
Descripción	204 Pin SO-DIMM
Fabricantes	Swissbit
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Data Sheet Rev.1.0 18.02.2014 1024MB DDR3 – SDRAM SO-DIMM 204 Pin SO-DIMM Features: SGN01G64C1CQ1SA-XX[E/W]RT  204-pin 64-bit DDR3 Small Outline Dual-In-Line Double 1GByte in FBGA Technology Data Rate Synchronous DRAM module  Module organization: single rank 128M x 64 RoHS compliant  VDD = 1.5V ±0.075V, VDDQ 1.5V ±0.075V  1.5V I/O ( SSTL_15 compatible) Options:  Fly-by-bus with termination for C/A & CLK bus  On-board I2C temperature sensor with integrated serial presence-detect (SPD) EEPROM  Data Rate / Latency DDR3 1333 MT/s CL9 Marking -CC  Gold-contact pads  This module is fully pin and functional compatible to the DDR3 1600 MT/s CL11 -DC JEDEC PC3-12800 spec. and JEDEC- Standard MO-268.  Module Density 1GByte with 4 dies and 1 rank (see www.jedec.org)  The pcb and all components are manufactured according to the RoHS compliance specification [EU Directive  Standard Grade Grade E Grade W (TA) 0°C to 70°C (TC) 0°C to 85°C  (TA) (TC) (TA) (TC) 0°C to 85°C 0°C to 95°C ) -40°C to 85°C -40°C to 95°C )    2002/95/EC Restriction of Hazardous Substances (RoHS)] DDR3 - SDRAM component Samsung K4B2G1646Q 128Mx16 DDR3 SDRAM in PG-TFBGA-96 package 8-bit pre-fetch architecture Programmable CAS Latency, CAS Write Latency, Additive Latency, Burst Length and Burst Type.  On-Die-Termination (ODT) and Dynamic ODT for improved ) The refresh rate has to be doubled when 85°C<TC<95°C) The refsreigsnharal tientheagsrittoy.be doubled when 85°C<TC<95°C  Refresh. Self Refresh and Power Down Modes. Environmental Requirements:  ZQ Calibration for output driver and ODT.  System Level Timing Calibration Support via Write Leveling  Operating temperature (ambient) Standard Grade 0°C to 70°C Grade E 0°C to 85°C Grade W  Operating Humidity -40°C to 85°C 10% to 90% relative humidity, noncondensing  Operating Pressure 105 to 69 kPa (up to 10000 ft.)  Storage Temperature -55°C to 100°C  Storage Humidity 5% to 95% relative humidity, noncondensing  Storage Pressure 1682 PSI (up to 5000 ft.) at 50°C and Multi Purpose Register (MPR) Read Pattern. Figure: mechanical dimensions1 Swissbit AG Industriestrasse 4 CH – 9552 Bronschhofen Fon: +41 (0) 71 913 03 03 Fax: +41 (0) 71 913 03 15 1if no tolerances specified ± 0.15mm www.swissbit.com eMail: [email protected] Page 1 of 17 1 page Data Sheet Rev.1.0 18.02.2014 FUNCTIONAL BLOCK DIAGRAMM 1024MB DDR3 SDRAM SODIMM, 1 RANK AND 4 COMPONENTS CKE0 ODT0 S0 3O+5% DQS0 DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS ODT CKE D0 DQS1 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS4 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 DQS5 DQS5 DM5 DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS ODT CKE D2 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 DQS2 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 DQS3 DM3 DQ24 DQ25 DQ26 DQ27 DQ28 DQ29 DQ30 DQ31 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS ODT CKE D1 UDQS UDQS UDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 DQS6 DQS6 DM6 DQ48 DQ49 DQ50 DQ51 DQ52 DQ53 DQ54 DQ55 DQS7 DQS7 DM7 DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63 LDQS LDQS LDM I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 CS ODT CKE D3 UDQS UDQS UDM I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 BA0-BA1 A0-A12 RAS CAS WE CKE0 CKE1 VDDSPD VREF VDD VSS VDDID SDRAMs D0-D3 SDRAMs D0-D3 SDRAMs D0-D3 SDRAMs D0-D3 SDRAMs D0-D3 SDRAMs D0-D3 N.C SPD SDRAMs D0-D3 SDRAMs D0-D3 VDD and VDDQ SDRAMs D0-D3, SPD SCL Serial PD WP A0 A1 A2 SDA SA0 SA1 SA2 * Clock Wiring Clock Input SDRAM CK0/CK0 CK1/CK1 CK2/CK2 NC 2 SDRAMs 2 SDRAMs Swissbit AG Industriestrasse 4 CH – 9552 Bronschhofen Fon: +41 (0) 71 913 03 03 Fax: +41 (0) 71 913 03 15 www.swissbit.com eMail: [email protected] Page 5 of 17 5 Page Data Sheet Rev.1.0 18.02.2014 DDR3 SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Continued) (0°C ≤ TCASE ≤ + 85°C; VDDQ = +1.5V ± 0.075V, VDD = +1.5V ± 0.075V) AC CHARACTERISTICS PARAMETER Exit reset from CKE HIGH to a valid command SYMBOL tXPR Begin power supply ramp to power supplies stable RESET# LOW to power supplies stable RESET# LOW to I/O and RTT High-Z Exit precharge power-down to any non-READ command CKE minimum high/low time tVDDPR tRPS tIOz tXP tCKE 12800 CL11 MIN MAX max 5nCK, tRFC + 10ns - - 200 0 200 - max 3nCK,6ns max 3nCK, 5ns 20 - - 10600 CL9 MIN MAX max 5nCK, tRFC + 10ns - - 200 Unit tCK ms - 200 ms - max 3nCK,6ns max 3nCK, 5.625ns 20 - - ns tCK tCK Temperature Sensor with Serial Presence-Detect EEPROM SCL EVENT R1 0Ω WP/ EVENT SA0 SA1 SA2 SA0 SA1 SDA Temperature Sensor with Serial Presence-Detect EEPROM Operating Conditions Parameter / Condition Symbol MIN MAX Supply voltage VDDSPD +3 +3.6 Supply current: Vdd = 3.3V IDD +2.0 Input high voltage: Logic 1; SCL, SDA VIH +1.45 VDDSPD +1 Input low voltage: Logic 0; SCL, SDA VIL - 550 Output low voltage: Iout = 2.1mA VOL - 400 Input current IIN -5.0 5.0 Temperature sensing range T.B.D T.B.D Temperature sensor accuracy T.B.D T.B.D Unit V mA V mV mV µA °C °C Swissbit AG Industriestrasse 4 CH – 9552 Bronschhofen Fon: +41 (0) 71 913 03 03 Fax: +41 (0) 71 913 03 15 www.swissbit.com eMail: [email protected] Page 11 of 17 11 Page

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