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PDF B774 Data sheet ( Hoja de datos )
| Número de pieza | B774 | |
| Descripción | PNP Transistor - 2SB774 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de B774 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
s Features
q High emitter to base voltage VEBO.
q Protective diodes and resistances between emitter and base can
be omitted.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–25
–15
–200
–100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCB = –10V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
VCE = –2V, IC = –100mA
–1 µA
–100 µA
–30 V
–25 V
–15 V
210 460
90
Collector to emitter saturation voltage VCE(sat)
IC = –100mA, IB = –10mA
–0.5 V
Transition frequency
fT VCB = –10V, IE = 2mA, f = 200MHz 150 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
4 pF
*hFE1 Rank classification
Rank
R
S
hFE1 210 ~ 340 290 ~ 460
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet B774.PDF ] | |
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