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PDF FZT549 Data sheet ( Hoja de datos )
| Número de pieza | FZT549 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1995
7
PARTMARKING DETAIL FZT549
FZT549
C
E
C
ABSOLUTE MAXIMUM RATINGS.
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
-35
-30
-5
-2
-1
2
-55 to +150
V
V
V
A
A
W
°C
UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -35
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -30
V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V IE=-100µA
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
VBE(sat)
-0.1
-10
-0.1
-0.50
-0.75
-1.25
µA
µA
µA
V
V
V
VCB=-30V
VCB=-30V, Tamb=100°C
VEB=-4V
IC=-1A, IB =-100mA*
IC=-2A, IB -200mA*
IC=-1A, IB=-100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
-1.0 V
IC =-1A, VCE =-2V*
Static Forward Current hFE
Transition Frequency
fT
70
100
80
30
100
IC=-50mA, VCE =-2V
300 IC =-500mA, VCE =-2V*
IC =-1A, VCE =-2V*
IC =-2A, VCE =-2V*
MHz
IC=-100mA, VCE=-5V,
f =100MHz
Output Capacitance
Cobo
10 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet.
VCB=-10V, f=1MHz
3 - 191
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