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PDF FZT658 Data sheet ( Hoja de datos )
| Número de pieza | FZT658 | |
| Descripción | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FZT658 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995
FEATURES
* 400 Volt VCEO
* Low saturation voltage
FZT658
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT758
FZT658
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
400 V
Collector-Emitter Voltage
VCEO
400 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 1 A
Continuous Collector Current
IC 0.5 A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
400
400
5
VBE(sat)
V
V
V
100 nA
100 nA
0.3 V
0.25 V
0.5 V
0.9 V
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VEB=4V
IC=20mA, IB=1mA*
IC=50mA, IB=5mA*
IC=100mA, IB=10mA
IC=100mA, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.0 V
IC=100mA, VCE=5V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE
fT
50
50
40
50
MHz
IC=1mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Switching Times
Cobo
ton
toff
10
130
3300
pF
ns
ns
VCB=20V, f=1MHz
IC=100mA, VCC=100V
IB1=10mA, IB2=-20mA
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 215
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FZT658.PDF ] | |
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