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PDF FZT692B Data sheet ( Hoja de datos )
| Número de pieza | FZT692B | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT692B
FEATURES
* High Gain + Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Relay drivers, DC-DC converters
PARTMARKING DETAIL - FZT692B
C
C
B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
70 V
Collector-Emitter Voltage
VCEO
70 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 5 A
Continuous Collector Current
IC
2A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.
E
BreakdownVoltages
Cut-Off Currents
Saturation Voltages
Base-Emitter
Turn-On Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
70
70
5
VBE(sat)
VBE(on)
0.1
0.1
0.15
0.5
0.5
0.9
0.9
V
V
V
µA
µA
V
V
V
V
V
IC=100µA
IC=10mA*
IE=100µA
VCB=55V
VEB=4V
IC=0.1A, IB=0.5mA*
IC=1A, IB=10mA*
IC=2A, IB=200mA*
IC=1A, IB=10mA*
IC=1A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
fT
Cibo
Cobo
ton
toff
500
400
150
150
200
12
46
1440
MHz
pF
pF
ns
ns
IC=100mA,VCE=2V*
IC=500mA, VCE =2V*
IC=1A,VCE=2V*
IC=50mA, VCE=5V, f=50MHz
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
IC=500mA, IB1=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 223
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FZT692B.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| FZT692 | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | Zetex Semiconductors |
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| FZT692B | NPN MEDIUM POWER HIGH GAIN TRANSISTOR |  Diodes |
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