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PDF FZT788B Data sheet ( Hoja de datos )
| Número de pieza | FZT788B | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Low equivalent on-resistance; RCE(sat) 93mΩ at 3A
* Gain of 300 at IC=2 Amps and Very low saturation voltage
FZT788B
C
APPLICATIONS
* Battery powered circuits
COMPLEMENTAY TYPE FZT688B
PARTMARKING DETAIL FZT788B
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX.
-15
-15
-5
-8
-3
2
-55 to +150
V
V
V
A
A
W
°C
UNIT CONDITIONS.
Collector-Base Breakdown Voltage V(BR)CBO
Collector-Emitter Breakdown Voltage V(BR)CEO
Emitter-Base Breakdown Voltage V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation
Voltage
VCE(sat)
-15
-15
-5
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
VBE(sat)
VBE(on)
hFE
fT
500
400
300
150
100
-0.1
-0.1
-0.15
-0.25
-0.45
-0.5
-0.9
V
V
V
µA
µA
V
V
V
V
-0.75
V
1500
MHz
Input Capacitance
Cibo 225 pF
Output Capacitance
Cobo
25 pF
Switching Times
ton 35 ns
toff 400 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-10V
VEB=-4V
IC=-0.5A, IB=-2.5mA*
IC=-1A, IB=-5mA*
IC=-2A, IB=-10mA*
IC=-3A, IB=-50mA*
IC=-1A, IB=-5mA*
IC=-1A, VCE=-2V*
IC=-10mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
IC=-50mA, VCE=-5V
f=50MHz
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V
3 - 244
1 page | ||
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